SCHEMBL683622

SCHEMBL683622

CCC(C)c1ccc(OC(C)OCCCC2CCCCC2)cc1

nearest known ligand 0.41

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.40
HRH3 Q9Y5N1 1/20 0.39
KMT2A Q03164 3/20 0.38
SLC7A5 Q01650 1/20 0.38
NFE2L2 Q16236 1/20 0.36
MEN1 O00255 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
TSHR P16473 1/20 0.35
HPGD P15428 1/20 0.35
FFAR1 O14842 1/20 0.35
CYP1A2 P05177 1/20 0.35
MITF O75030 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL682208 0.99 ALDH1A1 (0.41) ALDH1A1HRH3KMT2ASLC7A5NFE2L2
SCHEMBL111625 0.92 ALDH1A1 (0.42) ALDH1A1KMT2ASLC7A5NFE2L2MEN1
SCHEMBL14049134 0.92 ALDH1A1 (0.42) ALDH1A1KMT2ASLC7A5NFE2L2MEN1
SCHEMBL683300 0.91 ALDH1A1 (0.43) ALDH1A1KMT2ASLC7A5NFE2L2MEN1
SCHEMBL682855 0.84 FFAR1 (0.43) ALDH1A1KMT2ASLC7A5MEN1TSHR
SCHEMBL683303 0.83 ALDH1A1 (0.42) ALDH1A1KMT2ASLC7A5MEN1TDP1
SCHEMBL6367423 0.82 SLC7A5 (0.47) ALDH1A1KMT2ASLC7A5MEN1TDP1
SCHEMBL14258788 0.82 SLC7A5 (0.47) ALDH1A1KMT2ASLC7A5MEN1TDP1
SCHEMBL17515459 0.82 SLC7A5 (0.41) ALDH1A1HRH3KMT2ASLC7A5NFE2L2
SCHEMBL11960798 0.82 HRH3 (0.37) ALDH1A1HRH3KMT2ANFE2L2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed