Butyric Acid

Butyric Acid

SCHEMBL6837780

CCCC(=O)O.O.[CaH2]

nearest known ligand 0.00

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Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Butyric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butyric Acid SCHEMBL6234018 1.00
Butyric Acid SCHEMBL8989554 1.00 FFAR3 (0.87)
Butyric Acid SCHEMBL10520334 0.97 FFAR3 (0.93)
Butyric Acid SCHEMBL28476290 0.97 FFAR3 (0.93)
Butyric Acid SCHEMBL27318260 0.97 FFAR3 (0.93)
Butyric Acid SCHEMBL2230669 0.97 FFAR3 (0.93)
Butyric Acid SCHEMBL18039001 0.97 FFAR3 (0.93)
Butyric Acid SCHEMBL2234517 0.97
Butyric Acid SCHEMBL1650329 0.97
Butyric Acid SCHEMBL2237523 0.97

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1795964-A Heat Recovery System for Renewable Absorbent Materials YAGAOSI ADVANCED TECH CO LTD (HK) 2006-07-05 CN claimed
CN-1795964-A Heat Recovery System for Renewable Absorbent Materials YAGAOSI ADVANCED TECH CO LTD (HK) 2006-07-05 CN disclosed
US-6758872-B2 DISPERSION OF ABRASIVE GRAINS COMPRISNG COMPOUNDS OF CERIUM, COPPER, AND/OR AMMONIUM HITACHI, LTD. (JP) 2004-07-06 US disclosed
US-6656022-B2 Abrasive grains having remained after polishing are easily removed HITACHI, LTD. (JP) 2003-12-02 US disclosed
US-6656021-B2 Process for fabricating a semiconductor device HITACHI, LTD. (JP) 2003-12-02 US disclosed
US-20020090894-A1 Method for polishing a semiconductor substrate member RENESAS ELECTRONICS CORPORATION (JP) 2002-07-11 US disclosed
US-20020034925-A1 Process for fabricating a semiconductor device RENESAS ELECTRONICS CORPORATION (JP) 2002-03-21 US disclosed
US-20020004360-A1 Polishing slurry RENESAS ELECTRONICS CORPORATION (JP) 2002-01-10 US disclosed