Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IDO1 | P14902 | 2/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | PDE2A | O00408 | 1/20 | 0.30 |
| ▸ | TSHR | P16473 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9222918 | 0.82 | TSHR (0.42) | TSHR | |
| SCHEMBL5381799 | 0.81 | KDM4E (0.37) | IDO1LMNATSHR | |
| SCHEMBL24630973 | 0.80 | ADRB2 (0.50) | LMNATSHR | |
| SCHEMBL27998221 | 0.79 | GPR84 (0.38) | IDO1LMNATSHR | |
| SCHEMBL7048243 | 0.79 | IDO1 (0.31) | IDO1LMNATSHR | |
| Hydrochloric Acid SCHEMBL27998010 | 0.78 | GPR84 (0.37) | IDO1LMNATSHR | |
| SCHEMBL11151068 | 0.78 | CYP1A2 (0.30) | LMNATSHR | |
| SCHEMBL2611045 | 0.78 | GABRA1 (0.39) | LMNATSHR | |
| SCHEMBL5016076 | 0.77 | GPR84 (0.30) | — | |
| SCHEMBL27635807 | 0.75 | FFAR1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-109743878-B | Suspension and grinding method | 昭和电工材料株式会社 | 2021-07-06 | — | — | CN | claimed |
| US-4212754-A | LIGANDS CONTAINING AMINE, HYDROXY, OXAZOLINE, AND IMIDAZOLINE GROUPS | MOBIL OIL CORPORATION (US) | 1980-07-15 | — | — | US | claimed |
| US-12630742-B2 | Polishing composition using polishing particles containing basic substance and having high water affinity | NISSAN CHEMICAL CORPORATION (JP) | 2026-05-19 | — | — | US | disclosed |
| US-20260117105-A1 | POLISHING COMPOSITION HAVING EXCELLENT STORAGE STABILITY AND METHOD FOR PRODUCING SAME | NISSAN CHEMICAL CORPORATION (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260042978-A1 | PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE | TOKYO OHKA KOGYO CO LTD (JP) | 2026-02-12 | — | — | US | disclosed |
| US-20260028553-A1 | PROCESSING SOLUTION, METHOD FOR MANUFACTURING PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | TOKYO OHKA KOGYO CO LTD (JP) | 2026-01-29 | — | — | US | disclosed |
| US-20250270480-A1 | PROCESSING SOLUTION, METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-08-28 | — | — | US | disclosed |
| US-20250270474-A1 | PROCESSING SOLUTION, METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-08-28 | — | — | US | disclosed |
| US-20250201546-A1 | METHOD FOR PROCESSING SUBSTRATE, KIT FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-06-19 | — | — | US | disclosed |
| US-20250136843-A1 | POLISHING COMPOSITION COMPRISING POLISHING PARTICLES HAVING HIGH WATER AFFINITY | NISSAN CHEMICAL CORPORATION (JP) | 2025-05-01 | — | — | US | disclosed |
| US-20250140548-A1 | PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD, (JP) | 2025-05-01 | — | — | US | disclosed |
| US-20160107286-A1 | CMP POLISHING SOLUTION AND POLISHING METHOD USING SAME | HITACHI CHEMICAL COMPANY, LTD (JP) | 2016-04-21 | — | — | US | disclosed |
| US-20160086819-A1 | CMP POLISHING SOLUTION AND POLISHING METHOD USING SAME | HITACHI CHEMICAL COMPANY, LTD (JP) | 2016-03-24 | — | — | US | disclosed |
| CN-1803964-B | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using same | HITACHI CHEMICAL CO LTD | 2010-12-15 | — | — | CN | disclosed |
| CN-101045855-A | Polishing fluid and polishing method | HITACHI CHEMICAL CO LTD (JP) | 2007-10-03 | — | — | CN | disclosed |
| CN-101037586-A | Polishing fluid and method of polishing | HITACHI CHEMICAL CO LTD (JP) | 2007-09-19 | — | — | CN | disclosed |
| CN-1803964-A | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using same | HITACHI CHEMICAL CO LTD (JP) | 2006-07-19 | — | — | CN | disclosed |
| CN-1243071-C | Metal polishing liquid material, metal polishing liquid, method for producing same, and polishing method using same | HITACHI CHEMICAL CO LTD (JP) | 2006-02-22 | — | — | CN | disclosed |
| US-20040148867-A1 | Chelating resin particle consisting of aminocarboxylic acid, aminophosphonic acid, and/or iminodiacetic acid group; inorganic particle and anionic surfactant; chemical mechanical polishing | SUMITOMO CHEMICAL COMPANY, LIMITED | 2004-08-05 | — | — | US | disclosed |
| CN-1392215-A | Metal polishing liquid material, metal polishing liquid, method for producing same, and polishing method using same | HITACHI CHEMICAL CO LTD (JP) | 2003-01-22 | — | — | CN | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260117105-A1 | POLISHING COMPOSITION HAVING EXCELLENT STORAGE STABILITY AND METHOD FOR PRODUCING SAME | SRPRA, SEM1, PSMA1 | IDO1 3564/4885LMNA 1106/4885PDE2A 2391/4885 |
| US-20260028553-A1 | PROCESSING SOLUTION, METHOD FOR MANUFACTURING PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | TET2, TET1, KDM2A | IDO1 179/4885LMNA 3633/4885PDE2A 544/4885 |
| US-20260042978-A1 | PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE | TWF2, DSTYK, WNK1 | IDO1 1466/4885LMNA 4667/4885PDE2A 4787/4885 |
| US-12630742-B2 | Polishing composition using polishing particles containing basic substance and having high water affinity | POLR1A, PRMT1, SRRM2 | IDO1 2430/4885LMNA 978/4885PDE2A 1073/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.