SCHEMBL685168

SCHEMBL685168

CC(F)(F)C(=O)OCCC1CCCCC1

nearest known ligand 0.44

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.40
MEN1 O00255 1/20 0.38
MAPT P10636 1/20 0.38
KMT2A Q03164 1/20 0.38
ATM Q13315 1/20 0.38
FKBP1A P62942 4/20 0.38
HPGD P15428 1/20 0.36
CHRM2 P08172 2/20 0.36
CHRM4 P08173 2/20 0.36
CHRM5 P08912 2/20 0.36
CHRM1 P11229 2/20 0.36
CHRM3 P20309 2/20 0.36
NAAA Q02083 4/20 0.35
CYP1A2 P05177 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL685909 0.90 SMN1; SMN2 (0.51) EPHX1SMN1; SMN2FKBP1ANAAA
SCHEMBL686211 0.88 EPHX1 (0.55) EPHX1SMN1; SMN2FKBP1ANAAA
SCHEMBL685164 0.88 SMN1; SMN2 (0.49) EPHX1SMN1; SMN2FKBP1ANAAA
SCHEMBL17740621 0.85 FKBP1A (0.43) EPHX1SMN1; SMN2MEN1MAPTKMT2A
SCHEMBL686028 0.84 LMNA (0.47) EPHX1SMN1; SMN2MEN1MAPTKMT2A
SCHEMBL685931 0.84 LMNA (0.47) EPHX1SMN1; SMN2MEN1MAPTKMT2A
SCHEMBL686209 0.84 LMNA (0.47) EPHX1SMN1; SMN2MEN1MAPTKMT2A
SCHEMBL26356971 0.82 EPHX1 (0.41) EPHX1SMN1; SMN2MEN1MAPTKMT2A
SCHEMBL25607894 0.82 EPHX1 (0.41) EPHX1SMN1; SMN2MEN1MAPTKMT2A
SCHEMBL685740 0.81 LMNA (0.44) SMN1; SMN2MEN1MAPTKMT2AATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-20150132698-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-05-14 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8921029-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-30 US disclosed
US-8916330-B2 Chemically amplified photoresist composition and method for forming resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-23 US disclosed
US-8906589-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-09 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20110059400-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-10 US disclosed
US-20110053082-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-03 US disclosed
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY,LIMITED (JP) 2011-03-03 US disclosed
US-20110039208-A1 PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110033804-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-10 US disclosed
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20100330497-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110059400-A1 PHOTORESIST COMPOSITION C1R, C1S, CCNT1 EPHX1 1871/4885SMN1; SMN2 4159/4885MEN1 1989/4885
US-20110065040-A1 PHOTORESIST COMPOSITION C1R, P4HA1, C1S EPHX1 711/4885SMN1; SMN2 4598/4885MEN1 1707/4885
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, XPOT, ERCC4 EPHX1 3648/4885SMN1; SMN2 4299/4885MEN1 1450/4885
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, NPPA, ERCC4 EPHX1 2467/4885SMN1; SMN2 4349/4885MEN1 888/4885
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN OR10J3, C1R, C9 EPHX1 1277/4885SMN1; SMN2 4129/4885MEN1 4120/4885
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME RCOR3, RCN1, HRH4 EPHX1 1816/4885SMN1; SMN2 4285/4885MEN1 2367/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.