Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.31 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1697128 | 0.88 | ALDH1A1 (0.33) | ALDH1A1TSHR | |
| SCHEMBL10027362 | 0.86 | THRB (0.33) | ALDH1A1TSHR | |
| SCHEMBL25617837 | 0.86 | GPX4 (0.35) | ALDH1A1 | |
| SCHEMBL19062654 | 0.86 | GPX4 (0.35) | ALDH1A1 | |
| SCHEMBL75422 | 0.86 | GPX4 (0.35) | ALDH1A1 | |
| SCHEMBL17754040 | 0.82 | MAPT (0.32) | ALDH1A1TSHR | |
| SCHEMBL13330294 | 0.82 | THRB (0.38) | ALDH1A1CYP3A4CYP2D6TSHRCYP2C19 | |
| SCHEMBL12840775 | 0.82 | ALDH1A1 (0.33) | ALDH1A1TSHR | |
| SCHEMBL685690 | 0.81 | TSHR (0.31) | ALDH1A1CYP3A4TSHR | |
| SCHEMBL22446097 | 0.81 | SMN1; SMN2 (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 328 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-9791776-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-10-17 | — | — | US | disclosed |
| US-9791776-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-10-17 | — | — | US | disclosed |
| US-9740102-B2 | Photoresist composition and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740102-B2 | Photoresist composition and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9671692-B2 | Compound, resin and photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-06-06 | — | — | US | disclosed |
| US-9671692-B2 | Compound, resin and photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-06-06 | — | — | US | disclosed |
| US-9644056-B2 | Compound, resin and photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-05-09 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | ALDH1A1 2217/4885CYP3A4 1582/4885CYP2D6 949/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.