SCHEMBL686018

SCHEMBL686018

C=C(C)C(=O)CC1(C)CCCCC1

nearest known ligand 0.33

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CYP2C19 P33261 1/20 0.33
ALDH1A1 P00352 3/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
USP2 O75604 1/20 0.31
LMNA P02545 1/20 0.31
CYP1A2 P05177 1/20 0.31
TSHR P16473 1/20 0.31
BLM P54132 1/20 0.31
CACNA2D1 P54289 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10941333 0.81 ALDH1A1 (0.41) CYP2C19ALDH1A1SMN1; SMN2USP2LMNA
SCHEMBL6752945 0.78 CYP2C19 (0.38) CYP2C19ALDH1A1SMN1; SMN2USP2LMNA
SCHEMBL25561409 0.76
SCHEMBL22873397 0.76 CYP2C19 (0.31) CYP2C19
SCHEMBL10165469 0.76 CYP1A2 (0.37) CYP2C19ALDH1A1SMN1; SMN2USP2LMNA
SCHEMBL7976321 0.75 CYP2C19 (0.38) CYP2C19ALDH1A1SMN1; SMN2USP2LMNA
SCHEMBL7978219 0.75 CYP2C19 (0.38) CYP2C19ALDH1A1SMN1; SMN2USP2LMNA
SCHEMBL1334944 0.75 CYP2C19 (0.38) CYP2C19ALDH1A1SMN1; SMN2USP2LMNA
SCHEMBL15132953 0.75 CYP2C19 (0.34) CYP2C19ALDH1A1SMN1; SMN2USP2LMNA
SCHEMBL28599007 0.75 HSD17B10 (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 106 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9429841-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-30 US disclosed
US-9346750-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-24 US disclosed
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-9233945-B2 Compound, resin and photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-12 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9052591-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-09 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-20110117494-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-05-19 US disclosed
US-20110117495-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-05-19 US disclosed
US-20110117493-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-05-19 US disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed
US-20110091808-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-04-21 US disclosed
US-20110076617-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-31 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20110065047-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICHAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20110065041-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20100330497-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110091808-A1 PHOTORESIST COMPOSITION ASIC1, ASIC3, SUN2 CYP2C19 3560/4885ALDH1A1 2111/4885SMN1; SMN2 4235/4885
US-20110065047-A1 PHOTORESIST COMPOSITION C1R, C1S, RER1 CYP2C19 1551/4885ALDH1A1 1016/4885SMN1; SMN2 4402/4885
US-20110117495-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, C1R CYP2C19 2292/4885ALDH1A1 4075/4885SMN1; SMN2 4569/4885
US-20110117493-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, C1R, AFF1 CYP2C19 2372/4885ALDH1A1 3861/4885SMN1; SMN2 4474/4885
US-20110065040-A1 PHOTORESIST COMPOSITION C1R, P4HA1, C1S CYP2C19 833/4885ALDH1A1 706/4885SMN1; SMN2 4598/4885
US-20110117494-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, C1R, AFF1 CYP2C19 2792/4885ALDH1A1 4110/4885SMN1; SMN2 4319/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.