SCHEMBL686279

SCHEMBL686279

CC(C)(C(=O)OC1CCCCC1=O)C(F)(F)F

nearest known ligand 0.45

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.45
ALDH1A1 P00352 6/20 0.44
POLB P06746 4/20 0.44
LMNA P02545 2/20 0.44
USP2 O75604 1/20 0.44
KDM4E B2RXH2 3/20 0.43
HSD17B10 Q99714 1/20 0.43
PKM P14618 2/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37
KMT2A Q03164 2/20 0.36
MEN1 O00255 1/20 0.36
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA4 P22748 1/20 0.35
CYP2D6 P10635 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12345830 0.95 MAPT (0.40) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL686129 0.87 ALDH1A1 (0.46) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL686277 0.87 ALDH1A1 (0.46) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL7595902 0.83 MAPT (0.49) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL685842 0.82 ALDH1A1 (0.40) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL787111 0.79 ALDH1A1 (0.39) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL787176 0.79 ALDH1A1 (0.39) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL12446157 0.79 ALDH1A1 (0.40) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL2603030 0.78 ALDH1A1 (0.38) MAPTALDH1A1POLBLMNAUSP2
SCHEMBL787152 0.78 ALDH1A1 (0.41) MAPTALDH1A1POLBLMNAUSP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9221785-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-12-29 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9051405-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-09 US disclosed
US-20150132698-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-05-14 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-20110053082-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-03 US disclosed
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY,LIMITED (JP) 2011-03-03 US disclosed
US-20110039208-A1 PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110033804-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-10 US disclosed
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20100323296-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-23 US disclosed
US-20100316951-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-16 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100316951-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME THEM6, INTS6, CRY1 MAPT 665/4885ALDH1A1 2847/4885POLB 2255/4885
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 MAPT 941/4885ALDH1A1 918/4885POLB 3703/4885
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, XPOT, ERCC4 MAPT 830/4885ALDH1A1 4445/4885POLB 80/4885
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, NPPA, ERCC4 MAPT 2596/4885ALDH1A1 3326/4885POLB 291/4885
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN OR10J3, C1R, C9 MAPT 4328/4885ALDH1A1 2546/4885POLB 2945/4885
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME RCOR3, RCN1, HRH4 MAPT 2229/4885ALDH1A1 1871/4885POLB 4125/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.