SCHEMBL686291

SCHEMBL686291

CC(F)(F)C(=O)OCC(=O)OC12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.36

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.36
MDH1 P40925 1/20 0.35
MDH2 P40926 1/20 0.35
LMNA P02545 1/20 0.34
CYP19A1 P11511 2/20 0.33
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
THRB P10828 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.32
CYP17A1 P05093 1/20 0.32
HSD11B1 P28845 1/20 0.32
NPSR1 Q6W5P4 3/20 0.32
USP2 O75604 1/20 0.32
TSHR P16473 1/20 0.32
EPHX2 P34913 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL685859 0.88 CYP19A1 (0.41) ALDH1A1LMNACYP19A1CYP17A1NPSR1
SCHEMBL14727748 0.87 ALDH1A1 (0.31) ALDH1A1LMNA
SCHEMBL12608518 0.87 ALDH1A1 (0.46) ALDH1A1LMNANPC1RAB9AL3MBTL1
SCHEMBL12608515 0.86 MDH1 (0.34) ALDH1A1MDH1MDH2CYP19A1CYP17A1
SCHEMBL12608514 0.86 MDH1 (0.34) ALDH1A1MDH1MDH2CYP19A1CYP17A1
SCHEMBL14929560 0.86 ALDH1A1 (0.35) ALDH1A1MDH1MDH2LMNANPC1
SCHEMBL2607846 0.86 ALDH1A1 (0.35) ALDH1A1MDH1MDH2LMNANPC1
SCHEMBL685887 0.85 ALDH1A1 (0.35) ALDH1A1MDH1MDH2LMNANPC1
SCHEMBL776275 0.85 CYP17A1 (0.36) ALDH1A1MDH1MDH2CYP19A1CYP17A1
SCHEMBL14727734 0.85 ALDH1A1 (0.32) ALDH1A1MDH1MDH2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9221785-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-12-29 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9051405-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-09 US disclosed
US-20150132698-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-05-14 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-20110053082-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-03 US disclosed
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY,LIMITED (JP) 2011-03-03 US disclosed
US-20110039208-A1 PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110033804-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-10 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20100323296-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-23 US disclosed
US-20100316951-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-16 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100316951-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME THEM6, INTS6, CRY1 ALDH1A1 2847/4885MDH1 4035/4885MDH2 3387/4885
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 ALDH1A1 918/4885MDH1 4523/4885MDH2 4450/4885
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, XPOT, ERCC4 ALDH1A1 4445/4885MDH1 4680/4885MDH2 4327/4885
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, NPPA, ERCC4 ALDH1A1 3326/4885MDH1 3742/4885MDH2 3068/4885
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN OR10J3, C1R, C9 ALDH1A1 2546/4885MDH1 3726/4885MDH2 2613/4885
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME RCOR3, RCN1, HRH4 ALDH1A1 1871/4885MDH1 3592/4885MDH2 2689/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.