SCHEMBL6930909

SCHEMBL6930909

[N-]=[N+]=C(S(=O)(=O)Cc1ccc(Cl)cc1)S(=O)(=O)Cc1ccc(Cl)cc1

nearest known ligand 0.42

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 6/20 0.40
MEN1 O00255 5/20 0.40
KDM4E B2RXH2 2/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
ALDH1A1 P00352 2/20 0.37
HPGD P15428 1/20 0.37
HSD17B10 Q99714 1/20 0.37
EGFR P00533 1/20 0.37
ERBB2 P04626 1/20 0.37
RECQL P46063 1/20 0.36
PTGES2 Q9H7Z7 1/20 0.36
NPC1 O15118 1/20 0.35
BRAF P15056 1/20 0.35
LMNA P02545 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6549890 0.81 CA2 (0.52) KMT2AKDM4EALDH1A1HPGDHSD17B10
SCHEMBL7757515 0.71 CA1 (0.46) KMT2AKDM4EALDH1A1HPGDHSD17B10
SCHEMBL6932936 0.71 ALDH1A1 (0.45) KMT2AKDM4EALDH1A1HPGDHSD17B10
SCHEMBL1645091 0.71 CA1 (0.60) KMT2AMEN1KDM4EL3MBTL1ALDH1A1
SCHEMBL496749 0.71 MEN1 (0.48) KMT2AMEN1KDM4EL3MBTL1ALDH1A1
SCHEMBL547494 0.71 ALDH1A1 (0.48) KMT2AMEN1KDM4EALDH1A1HPGD
SCHEMBL1194611 0.71 KMT2A (0.52) KMT2AMEN1KDM4EL3MBTL1ALDH1A1
SCHEMBL28917421 0.70 L3MBTL1 (0.42) KMT2AMEN1KDM4EL3MBTL1ALDH1A1
Hydrochloric Acid SCHEMBL28259963 0.70 MEN1 (0.47) KMT2AMEN1KDM4EL3MBTL1ALDH1A1
SCHEMBL9162919 0.69 KMT2A (0.50) KMT2AMEN1KDM4EL3MBTL1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed
EP-0417557-B1 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AG (DE) 1996-12-11 EP disclosed
EP-0444493-B1 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AG (DE) 1996-11-20 EP disclosed
US-5424166-A Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom HOECHST AKTIENGESELLSCHAFT (DE) 1995-06-13 US disclosed
US-5338641-A Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-16 US disclosed
EP-0444493-A2 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-04 EP disclosed
EP-0417557-A2 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-03-20 EP disclosed