SCHEMBL702079

SCHEMBL702079

CCCO[Si](C[Si](OCCC)(OCCC)c1ccccc1)(OCCC)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
ALDH1A1 P00352 3/20 0.34
LTA4H P09960 2/20 0.34
HPGD P15428 2/20 0.34
TOP2A P11388 1/20 0.32
GAA P10253 2/20 0.31
TP53 P04637 1/20 0.31
TLR8 Q9NR97 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
KDM4E B2RXH2 1/20 0.31
OPRM1 P35372 1/20 0.30
OPRD1 P41143 1/20 0.30
OPRK1 P41145 1/20 0.30
OPRL1 P41146 1/20 0.30
FGFR1 P11362 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706157 0.88 LTA4H (0.44) ALDH1A1LTA4HTLR8FGFR1
SCHEMBL705446 0.88 LMNA (0.37) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL706072 0.88 LMNA (0.37) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL702244 0.86 LMNA (0.36) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL4082632 0.84 LMNA (0.35) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL706699 0.84 LTA4H (0.36) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL702211 0.84 LTA4H (0.36) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL4086083 0.84 LMNA (0.35) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL27461052 0.84 MEN1 (0.35) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL4075448 0.84 LMNA (0.35) LMNAMEN1KMT2AALDH1A1LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed