SCHEMBL702646

SCHEMBL702646

CC(C)[Si](CC[Si](Oc1ccccc1)(C(C)C)C(C)C)(Oc1ccccc1)C(C)C

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.41
MAOA P21397 1/20 0.37
PTGS1 P23219 1/20 0.37
CA4 P22748 1/20 0.37
MTNR1A P48039 4/20 0.37
MTNR1B P49286 4/20 0.37
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
ALOX15 P16050 1/20 0.34
KDM4E B2RXH2 1/20 0.34
ADRB2 P07550 1/20 0.33
ADRB1 P08588 1/20 0.33
CYP2D6 P10635 1/20 0.33
ADRB3 P13945 1/20 0.33
VCP P55072 1/20 0.33
ALDH1A1 P00352 1/20 0.33
MAPT P10636 1/20 0.33
ALOX12 P18054 1/20 0.33
POLB P06746 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707368 0.92 LMNA (0.38) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL706450 0.92 LMNA (0.38) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL702424 0.87 LMNA (0.41) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL703579 0.78 LMNA (0.41) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL702568 0.75 LMNA (0.38) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL703601 0.75 LMNA (0.38) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL706142 0.75 CA4 (0.42) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL432208 0.75 CA4 (0.42) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL425476 0.75 CA4 (0.42) LMNAMAOAPTGS1CA4MTNR1A
SCHEMBL705691 0.74 LMNA (0.41) LMNAMAOAPTGS1CA4MTNR1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed