SCHEMBL707368

SCHEMBL707368

CC(C)[Si](CCCC[Si](Oc1ccccc1)(C(C)C)C(C)C)(Oc1ccccc1)C(C)C

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.38
KCNA3 P22001 1/20 0.37
MAOA P21397 1/20 0.35
PTGS1 P23219 1/20 0.35
MTNR1A P48039 1/20 0.35
MTNR1B P49286 1/20 0.35
CA4 P22748 1/20 0.34
KCNH2 Q12809 1/20 0.34
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
LTA4H P09960 2/20 0.33
HTR1B P28222 1/20 0.33
HPGD P15428 1/20 0.33
GAA P10253 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
KDM4E B2RXH2 1/20 0.33
ALOX15 P16050 1/20 0.32
TSHR P16473 1/20 0.32
VCP P55072 1/20 0.32
ADRB2 P07550 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706450 0.96 LMNA (0.38) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL702646 0.92 LMNA (0.41) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL702424 0.83 LMNA (0.41) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL703601 0.80 LMNA (0.38) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL702568 0.76 LMNA (0.38) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL703579 0.75 LMNA (0.41) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL705384 0.72 KCNA3 (0.41) LMNAKCNA3CA4KCNH2LTA4H
SCHEMBL706868 0.72 KCNA3 (0.41) LMNAKCNA3CA4KCNH2LTA4H
SCHEMBL425476 0.72 CA4 (0.42) LMNAKCNA3MAOAPTGS1MTNR1A
SCHEMBL706142 0.72 CA4 (0.42) LMNAKCNA3MAOAPTGS1MTNR1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed