SCHEMBL702652

SCHEMBL702652

CCCCO[SiH2]C(C)(C)C(c1ccccc1)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.39
CYP1A2 P05177 2/20 0.35
CYP2C9 P11712 2/20 0.35
CYP2C19 P33261 2/20 0.35
CYP3A4 P08684 1/20 0.35
CYP2D6 P10635 1/20 0.35
TSHR P16473 1/20 0.35
LMNA P02545 2/20 0.35
RIPK1 Q13546 2/20 0.35
POLB P06746 2/20 0.34
NPC1 O15118 2/20 0.34
RAB9A P51151 2/20 0.34
SMN1; SMN2 Q16637 2/20 0.34
CTSK P43235 2/20 0.34
ESR1 P03372 1/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
KDM4E B2RXH2 1/20 0.33
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706842 0.90 LMNA (0.37) CYP1A2CYP2D6TSHRLMNARIPK1
SCHEMBL708398 0.83 LMNA (0.39) CYP1A2CYP2C9CYP2C19CYP3A4TSHR
SCHEMBL10879018 0.82 HRH1 (0.41) CYP1A2CYP2C9CYP2C19CYP3A4CYP2D6
SCHEMBL9525131 0.77 ELANE (0.33) LMNARIPK1ALDH1A1
Biphenyl SCHEMBL27660673 0.75 LTA4H (0.42) LTA4HCYP1A2CYP2C9CYP2C19CYP3A4
SCHEMBL27660698 0.75 LTA4H (0.42) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL1314693 0.74 LTA4H (0.39) LTA4HCYP1A2CYP2C9CYP2C19LMNA
SCHEMBL22555995 0.74 LMNA (0.43) LMNARIPK1KDM4EALDH1A1
SCHEMBL9525864 0.74
SCHEMBL706996 0.73 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed