SCHEMBL706842

SCHEMBL706842

CCCO[SiH2]C(C)(C)C(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.37
RIPK1 Q13546 2/20 0.37
AOC3 Q16853 2/20 0.33
OPRK1 P41145 3/20 0.33
OPRM1 P35372 2/20 0.33
OPRD1 P41143 1/20 0.33
OPRL1 P41146 1/20 0.33
HTT P42858 2/20 0.33
CHRNB2 P17787 1/20 0.33
CHRNB4 P30926 1/20 0.33
CHRNA3 P32297 1/20 0.33
CHRNA4 P43681 1/20 0.33
CNR1 P21554 1/20 0.33
CNR2 P34972 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
HRH1 P35367 4/20 0.32
HTR2A P28223 3/20 0.32
SCN1A P35498 2/20 0.32
SCN2A Q99250 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702652 0.90 LTA4H (0.39) LMNARIPK1MEN1KMT2ACYP1A2
SCHEMBL708398 0.86 LMNA (0.39) LMNARIPK1OPRK1CNR1CNR2
SCHEMBL10879018 0.85 HRH1 (0.41) RIPK1HRH1HTR2ASLC6A3KCNH2
SCHEMBL22555995 0.77 LMNA (0.43) LMNARIPK1AOC3CNR1CNR2
SCHEMBL9525131 0.73 ELANE (0.33) LMNARIPK1
SCHEMBL705924 0.73 RIPK1 (0.40) LMNARIPK1OPRK1OPRM1HTT
SCHEMBL704144 0.73 ATM (0.39) LMNARIPK1AOC3OPRK1CNR1
SCHEMBL704988 0.71 LMNA (0.38) LMNAOPRK1OPRM1OPRD1OPRL1
SCHEMBL702334 0.70 HRH1 (0.40) LMNAAOC3OPRK1OPRM1OPRD1
SCHEMBL8860874 0.70 RIPK1 (0.44) LMNARIPK1AOC3OPRK1HRH1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed