SCHEMBL706996

SCHEMBL706996

CCCCO[SiH2]C(c1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.43
GPR88 Q9GZN0 2/20 0.39
CYP1A2 P05177 1/20 0.38
CYP2C9 P11712 1/20 0.38
CYP2C19 P33261 1/20 0.38
NPC1 O15118 2/20 0.37
RAB9A P51151 2/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
LMNA P02545 1/20 0.37
KCNH2 Q12809 1/20 0.37
TSHR P16473 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
NPSR1 Q6W5P4 1/20 0.36
ALDH1A1 P00352 1/20 0.36
POLB P06746 1/20 0.36
MAPT P10636 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704988 0.89 LMNA (0.38) GPR88CYP1A2SMN1; SMN2LMNAKCNH2
SCHEMBL242576 0.80 LMNA (0.40) LMNATDP1L3MBTL1POLB
SCHEMBL1314693 0.80 LTA4H (0.39) LTA4HGPR88CYP1A2CYP2C9CYP2C19
SCHEMBL1315101 0.77 ESR1 (0.40) LTA4HCYP1A2CYP2C9CYP2C19LMNA
SCHEMBL705098 0.76 LTA4H (0.42) LTA4HGPR88CYP1A2CYP2C9CYP2C19
SCHEMBL702750 0.74 SIGMAR1 (0.41) LTA4HCYP1A2CYP2C9CYP2C19LMNA
SCHEMBL702652 0.73 LTA4H (0.39) LTA4HCYP1A2CYP2C9CYP2C19NPC1
SCHEMBL28399858 0.71 NPC1 (0.38) LTA4HNPC1RAB9ASMN1; SMN2LMNA
SCHEMBL28063230 0.71 KDM4E (0.50) CYP2C19NPC1RAB9ASMN1; SMN2LMNA
SCHEMBL706853 0.71 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed