SCHEMBL703028

SCHEMBL703028

CC(=O)O[Si](CC[Si](OC(C)=O)(C(C)C)C(C)C)(C(C)C)C(C)C

nearest known ligand 0.36

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.36
CHRM2 P08172 1/20 0.32
CHRM4 P08173 1/20 0.32
CHRM1 P11229 1/20 0.32
TBXA2R P21731 1/20 0.32
GALR3 O60755 1/20 0.31
MAPT P10636 1/20 0.31
BLM P54132 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
ALDH1A1 P00352 4/20 0.31
LMNA P02545 2/20 0.31
TDP1 Q9NUW8 1/20 0.31
HSD17B10 Q99714 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703538 0.91 TSHR (0.33) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL707411 0.91 TSHR (0.33) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL702926 0.85 TSHR (0.36) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL475948 0.85 ALDH1A1 (0.39) MAPTALDH1A1LMNA
SCHEMBL18359244 0.83 TSHR (0.35) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL6545459 0.82 LMNA (0.39) MAPTALDH1A1LMNA
SCHEMBL475920 0.82 LMNA (0.39) MAPTALDH1A1LMNA
SCHEMBL704904 0.75 TSHR (0.36) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL703763 0.71 TSHR (0.33) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL703824 0.71 TSHR (0.33) TSHRCHRM2CHRM4CHRM1TBXA2R

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed