SCHEMBL703538

SCHEMBL703538

CC(=O)O[Si](CCCC[Si](OC(C)=O)(C(C)C)C(C)C)(C(C)C)C(C)C

nearest known ligand 0.33

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.33
KDM4E B2RXH2 1/20 0.31
MAPK1 P28482 1/20 0.31
HIF1A Q16665 1/20 0.31
CHRM2 P08172 1/20 0.30
CHRM4 P08173 1/20 0.30
CHRM1 P11229 1/20 0.30
TBXA2R P21731 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707411 0.95 TSHR (0.33) TSHRKDM4EMAPK1HIF1ACHRM2
SCHEMBL703028 0.91 TSHR (0.36) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL6545459 0.90 LMNA (0.39) MAPK1
SCHEMBL475920 0.90 LMNA (0.39) MAPK1
SCHEMBL475948 0.90 ALDH1A1 (0.39)
SCHEMBL702926 0.81 TSHR (0.36) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL18359244 0.79 TSHR (0.35) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL703763 0.77 TSHR (0.33) TSHRKDM4EMAPK1HIF1ACHRM2
SCHEMBL4809801 0.75 TSHR (0.46) TSHRMAPK1
SCHEMBL5838116 0.74 TSHR (0.50) TSHRMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed