SCHEMBL703230

SCHEMBL703230

CC(=CC1CCOC1=O)C(=O)O

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.41
GABRA1 P14867 1/20 0.41
TSHR P16473 1/20 0.41
GABRG2 P18507 1/20 0.41
RXRA P19793 1/20 0.41
GABRB3 P28472 1/20 0.41
RXRB P28702 1/20 0.41
GABRB2 P47870 1/20 0.41
RXRG P48443 1/20 0.41
TDP1 Q9NUW8 1/20 0.36
MAPK1 P28482 1/20 0.31
POLB P06746 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2337798 1.00 ALDH1A1 (0.41) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL15753005 0.90 ALDH1A1 (0.39) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL821141 0.88 ALDH1A1 (0.38) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL30578996 0.84 KDM4E (0.39) ALDH1A1TSHRTDP1MAPK1POLB
SCHEMBL11128788 0.81 MAPK1 (0.31) MAPK1POLB
SCHEMBL23480562 0.78 MEN1 (0.33) ALDH1A1MAPK1
SCHEMBL700169 0.72 CYP1A2 (0.36) ALDH1A1GABRA1TSHRGABRG2RXRA
SCHEMBL8078394 0.72
SCHEMBL28226590 0.70 MAPK1 (0.33) MAPK1POLB
SCHEMBL701236 0.70 KDM4E (0.38) ALDH1A1GABRA1TSHRGABRG2RXRA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022258030-A1 COMPOSITION FOR 3D PRINTING, AND 3D PRINTING METHOD AND DEVICE 珠海赛纳三维科技有限公司 2022-12-15 WO claimed
CN-113388075-A Composition for 3D printing, 3D printing method and device 珠海赛纳三维科技有限公司 2021-09-14 CN claimed
EP-2929397-B1 POSITIVE WORKING PHOTOSENSITIVE MATERIAL AZ ELECTRONIC MAT LUXEMBOURG SARL (LU) 2020-03-18 EP claimed
US-20140154624-A1 POSITIVE WORKING PHOTOSENSITIVE MATERIAL AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (US) 2014-06-05 US claimed
US-20260010071-A1 SULFONIUM SALT, ACID DIFFUSION INHIBITOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
US-20260008749-A1 SULFONIUM SALT, ACID DIFFUSION INHIBITOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
CN-118240132-A Post-treatment method and application of photoresist resin 徐州博康信息化学品有限公司 2024-06-25 CN disclosed
EP-4372030-A1 CURABLE RESIN COMPOSITION Namics Corporation (JP) 2024-05-22 EP disclosed
EP-4372021-A1 CURABLE RESIN COMPOSITION Namics Corporation (JP) 2024-05-22 EP disclosed
WO-2024089906-A1 RESIN COMPOSITION, ADHESIVE, SEALANT, CURED PRODUCT AND SEMICONDUCTOR DEVICE NAMICS CORPORATION (JP) 2024-05-02 WO disclosed
WO-2024089905-A1 RESIN COMPOSITION, ADHESIVE, SEALANT, CURED PRODUCT, SEMICONDUCTOR DEVICE AND ELECTRONIC COMPONENT NAMICS CORPORATION (JP) 2024-05-02 WO disclosed
CN-111522198-B Resist composition and pattern forming method 信越化学工业株式会社 2024-01-26 CN disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100203447-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-08-12 US disclosed
US-20100068647-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-03-18 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260010071-A1 SULFONIUM SALT, ACID DIFFUSION INHIBITOR, RESIST COMPOSITION, AND PATTERNING PROCESS LBR, CA2, GLRA1 ALDH1A1 4045/4885GABRA1 791/4885TSHR 995/4885
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION AFF1, RER1, AFF4 ALDH1A1 3298/4885GABRA1 1830/4885TSHR 1006/4885
US-20260008749-A1 SULFONIUM SALT, ACID DIFFUSION INHIBITOR, RESIST COMPOSITION, AND PATTERNING PROCESS LBR, CA2, SLC6A9 ALDH1A1 4099/4885GABRA1 951/4885TSHR 937/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.