SCHEMBL703231

SCHEMBL703231

CCCC(CCC)(C(=O)O[SiH3])c1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SCN1A P35498 3/20 0.48
SCN2A Q99250 3/20 0.48
SCN3A Q9NY46 3/20 0.48
CYP2C19 P33261 3/20 0.48
LMNA P02545 2/20 0.48
CYP1A2 P05177 2/20 0.48
CYP3A4 P08684 2/20 0.48
CYP2D6 P10635 2/20 0.48
CYP2C9 P11712 2/20 0.48
TSHR P16473 2/20 0.48
NFKB1 P19838 1/20 0.48
MTOR P42345 1/20 0.48
RAB9A P51151 1/20 0.48
SIGMAR1 Q99720 1/20 0.48
MEN1 O00255 2/20 0.47
KMT2A Q03164 2/20 0.47
KDM4E B2RXH2 1/20 0.47
NR1I2 O75469 1/20 0.47
CYP1A1 P04798 1/20 0.47
CYP2E1 P05181 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705552 0.92 CYP3A4 (0.43) SCN1ASCN2ASCN3ACYP2C19LMNA
SCHEMBL705142 0.87 KCNN4 (0.46) CYP2C19LMNATSHRMEN1KMT2A
SCHEMBL4002098 0.84 KCNN4 (0.56) SCN1ASCN2ASCN3ACYP2C19LMNA
SCHEMBL8482340 0.83 SCN1A (0.51) SCN1ASCN2ASCN3ACYP2C19LMNA
SCHEMBL1076574 0.80 TSHR (0.50) SCN1ASCN2ASCN3ACYP2C19LMNA
Ammonia Solution, Strong SCHEMBL27636017 0.80 LMNA (0.56) SCN1ASCN2ASCN3ACYP2C19LMNA
SCHEMBL4002970 0.80 TSHR (0.53) SCN1ASCN2ASCN3ACYP2C19LMNA
SCHEMBL7056880 0.79 SCN1A (0.48) SCN1ASCN2ASCN3ACYP2C19LMNA
SCHEMBL14380533 0.79 SCN1A (0.48) SCN1ASCN2ASCN3ACYP2C19LMNA
SCHEMBL7057728 0.79 SCN1A (0.48) SCN1ASCN2ASCN3ACYP2C19LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed