SCHEMBL705552

SCHEMBL705552

CCCCC(CCCC)(C(=O)O[SiH3])c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 3/20 0.43
CYP2D6 P10635 3/20 0.43
SCN1A P35498 3/20 0.43
SCN2A Q99250 3/20 0.43
SCN3A Q9NY46 3/20 0.43
LMNA P02545 2/20 0.43
CYP1A2 P05177 2/20 0.43
CYP2C9 P11712 2/20 0.43
CYP2C19 P33261 2/20 0.43
KIF11 P52732 1/20 0.43
TSHR P16473 1/20 0.43
NFKB1 P19838 1/20 0.43
MTOR P42345 1/20 0.43
RAB9A P51151 1/20 0.43
SIGMAR1 Q99720 1/20 0.43
KMT2A Q03164 3/20 0.43
MEN1 O00255 2/20 0.43
KDM4E B2RXH2 1/20 0.43
NR1I2 O75469 1/20 0.43
CYP1A1 P04798 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703231 0.92 SCN1A (0.48) CYP3A4CYP2D6SCN1ASCN2ASCN3A
SCHEMBL705142 0.86 KCNN4 (0.46) LMNACYP2C19TSHRKMT2AMEN1
SCHEMBL4001019 0.85 KCNN4 (0.55) CYP3A4CYP2D6SCN1ASCN2ASCN3A
SCHEMBL10401643 0.83 SCN1A (0.43) CYP3A4CYP2D6SCN1ASCN2ASCN3A
SCHEMBL27579259 0.82 CYP3A4 (0.52) CYP3A4CYP2D6SCN1ASCN2ASCN3A
SCHEMBL28319843 0.82 LMNA (0.43) CYP3A4CYP2D6SCN1ASCN2ASCN3A
SCHEMBL8905858 0.81 ALDH1A1 (0.49) LMNACYP1A2CYP2C19KIF11TSHR
SCHEMBL7057728 0.81 SCN1A (0.48) CYP3A4CYP2D6SCN1ASCN2ASCN3A
SCHEMBL19066561 0.81 MEN1 (0.48) CYP3A4CYP2D6SCN1ASCN2ASCN3A
SCHEMBL14380533 0.81 SCN1A (0.48) CYP3A4CYP2D6SCN1ASCN2ASCN3A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed