SCHEMBL705142

SCHEMBL705142

CCC(CC)(C(=O)O[SiH3])c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.46
HDAC1 Q13547 1/20 0.44
CHRM2 P08172 4/20 0.43
CHRM1 P11229 4/20 0.43
CHRM3 P20309 4/20 0.43
MEN1 O00255 1/20 0.43
POLB P06746 1/20 0.43
KMT2A Q03164 1/20 0.43
GAA P10253 1/20 0.43
RGS12 O14924 1/20 0.42
APOBEC3A P31941 1/20 0.42
APOBEC3G Q9HC16 1/20 0.42
CHRM4 P08173 2/20 0.42
ALDH1A1 P00352 1/20 0.42
TSHR P16473 1/20 0.42
CYP2C19 P33261 1/20 0.41
HIF1A Q16665 1/20 0.41
CHRM5 P08912 1/20 0.41
HTT P42858 2/20 0.40
LMNA P02545 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703231 0.87 SCN1A (0.48) KCNN4HDAC1CHRM2CHRM1CHRM3
SCHEMBL705552 0.86 CYP3A4 (0.43) KCNN4CHRM2CHRM1CHRM3MEN1
SCHEMBL8483586 0.83 PIN1 (0.53) KCNN4HDAC1CHRM2CHRM1CHRM3
Ammonia Solution, Strong SCHEMBL10879989 0.81 PIN1 (0.51) KCNN4HDAC1CHRM2CHRM1CHRM3
SCHEMBL7054463 0.81 CHRM2 (0.58) KCNN4CHRM2CHRM1CHRM3MEN1
SCHEMBL504013 0.79 ALDH1A1 (0.57) KCNN4HDAC1CHRM2CHRM1CHRM3
SCHEMBL28272799 0.79 GAA (0.42) KCNN4HDAC1CHRM2CHRM1CHRM3
Hydrogen Sulfide SCHEMBL28874622 0.78 ALDH1A1 (0.55) KCNN4HDAC1CHRM2CHRM1CHRM3
Hydrogen Sulfide SCHEMBL27877649 0.78 ALDH1A1 (0.55) KCNN4HDAC1CHRM2CHRM1CHRM3
SCHEMBL7056880 0.76 SCN1A (0.48) CHRM2CHRM1CHRM3MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed