SCHEMBL703363

SCHEMBL703363

c1ccc([SiH](CCCC[SiH](c2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.32

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HTR2A P28223 1/20 0.32
HRH1 P35367 1/20 0.32
KCNA3 P22001 1/20 0.32
CALM1 P0DP23 1/20 0.32
ALDH1A1 P00352 2/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706873 0.94 CALM1 (0.38) HTR2AHRH1KCNA3CALM1ALDH1A1
SCHEMBL8680276 0.88 HDAC3 (0.42)
SCHEMBL11515611 0.88 TDP1 (0.36) ALDH1A1
SCHEMBL416285 0.88 LTA4H (0.38)
SCHEMBL11515460 0.88 TDP1 (0.36) ALDH1A1MAPT
SCHEMBL706709 0.88 CALM1 (0.35) CALM1ALDH1A1
SCHEMBL3518057 0.86 DNM1 (0.40) ALDH1A1
SCHEMBL8992138 0.86 DNM1 (0.40) ALDH1A1
SCHEMBL5973640 0.86 DNM1 (0.40) ALDH1A1
SCHEMBL28536133 0.86 KCNA3 (0.30) KCNA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed