SCHEMBL706709

SCHEMBL706709

c1ccc([SiH](CC[SiH](c2ccccc2)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CALM1 P0DP23 1/20 0.35
ALDH1A1 P00352 5/20 0.33
TSHR P16473 7/20 0.32
IDO1 P14902 1/20 0.32
DAO P14920 1/20 0.32
NAPRT Q6XQN6 1/20 0.32
TP53 P04637 1/20 0.32
LOXL2 Q9Y4K0 1/20 0.32
TRPA1 O75762 1/20 0.32
NOS1 P29475 1/20 0.31
ALOX12 P18054 2/20 0.30
MAPK1 P28482 1/20 0.30
HIF1A Q16665 1/20 0.30
MAOB P27338 1/20 0.30
HPGD P15428 1/20 0.30
ALOX15 P16050 1/20 0.30
CASP1 P29466 1/20 0.30
HSD17B10 Q99714 1/20 0.30
TDP1 Q9NUW8 2/20 0.30
CA12 O43570 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703363 0.88 HTR2A (0.32) CALM1ALDH1A1
SCHEMBL706873 0.88 CALM1 (0.38) CALM1ALDH1A1
SCHEMBL415335 0.83 TP53 (0.38) ALDH1A1TSHRTP53ALOX12HPGD
SCHEMBL1270669 0.83 TRPA1 (0.31) ALDH1A1TSHRTRPA1MAPK1HIF1A
SCHEMBL2412791 0.81 TSHR (0.41) CALM1ALDH1A1TSHRIDO1DAO
SCHEMBL704630 0.80 CALM1 (0.35) CALM1ALDH1A1TSHRIDO1DAO
SCHEMBL28871248 0.79 ALDH1A1 (0.39) ALDH1A1ALOX12HPGDALOX15CASP1
SCHEMBL114779 0.79 LTA4H (0.38) TSHRTP53MAPK1TDP1
SCHEMBL9862807 0.77 ALDH1A1 (0.34) ALDH1A1TSHRACHE
SCHEMBL416285 0.77 LTA4H (0.38) TP53MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed