SCHEMBL703642

SCHEMBL703642

O=C(O)CC(=CC1CC2CCC1C2)C(=O)O

nearest known ligand 0.42

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.42
KDM4E B2RXH2 2/20 0.37
TSHR P16473 1/20 0.37
MEN1 O00255 1/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
KMT2A Q03164 1/20 0.36
EPHX2 P34913 2/20 0.35
HPGD P15428 3/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
ATM Q13315 1/20 0.34
EPHX1 P07099 1/20 0.34
ALDH1A1 P00352 2/20 0.33
MAPT P10636 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
HSD11B1 P28845 1/20 0.32
LMNA P02545 1/20 0.31
MAPK1 P28482 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6396833 0.85 POLB (0.40) POLBMEN1NPC1RAB9AKMT2A
SCHEMBL245976 0.83 POLB (0.42) POLBMEN1NPC1RAB9AKMT2A
SCHEMBL562823 0.83 POLB (0.39) POLBMEN1NPC1RAB9AKMT2A
SCHEMBL158980 0.74 POLB (0.41) POLBTSHRMEN1NPC1RAB9A
SCHEMBL27647416 0.72 POLB (0.50) POLBKDM4EMEN1NPC1RAB9A
SCHEMBL32689195 0.70 POLB (0.41) POLBKDM4EMEN1NPC1RAB9A
SCHEMBL7708642 0.70 POLB (0.39) POLBEPHX2HPGDATMALDH1A1
SCHEMBL245018 0.70 POLB (0.39) POLBKDM4EMEN1NPC1RAB9A
SCHEMBL3248433 0.70 POLB (0.36) POLBMEN1NPC1RAB9AKMT2A
SCHEMBL126306 0.69 ATM (0.50) POLBMEN1NPC1RAB9AKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8808974-B2 Method for forming pattern JSR CORPORATION (JP) 2014-08-19 US disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 US disclosed
US-8182977-B2 Polymer and positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2012-05-22 US disclosed
US-8124314-B2 Radiation-sensitive composition JSR CORPORATION (JP) 2012-02-28 US disclosed
US-20110212401-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2011-09-01 US disclosed
US-20110151378-A1 RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2011-06-23 US disclosed
US-7956142-B2 Polymerizable sulfonic acid onium salt and resin JSR CORPORATION (JP) 2011-06-07 US disclosed
US-7897821-B2 Sulfonium compound JSR CORPORATION (JP) 2011-03-01 US disclosed
US-20110040056-A1 PROCESS FOR PRODUCTION OF POLYMER DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2011-02-17 US disclosed
US-20100324329-A1 COMPOUND JSR CORPORATION (JP) 2010-12-23 US disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100068650-A1 POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION JSR CORPORATION (JP) 2010-03-18 US disclosed
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR CORPORATION (JP) 2010-03-11 US disclosed
US-20070254247-A1 Radiation-sensitive resin composition YAMAMOTO MASAFUMI 2007-11-01 US disclosed
US-7005230-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-02-28 US disclosed
US-6921623-B2 Active components and photosensitive resin composition containing the same KRI, INC. (JP) 2005-07-26 US disclosed
US-20030211421-A1 Optically active compound and photosensitive resin composition KRI, INC. (JP) 2003-11-13 US disclosed
US-20030064320-A1 Active components and photosensitive resin composition containing the same KRI, INC. (JP) 2003-04-03 US disclosed
US-6287746-B1 PHOTOACID GENERATOR NEC CORPORATION (JP) 2001-09-11 US disclosed
US-6030747-A CHEMICALLY AMPLIFIED RESIST CONSISTS OF A PHOTOACID GENERATOR, A CROSSLINKING AGENT ACTIVATED IN PRESENCE OF ACID AND A COPOLYMER OF ACRYLIC OR METHACRYLIC ESTER CONTAINING AN ACID, HYDROXY OR ESTER POLAR GROUP AND A COMPOUND NEC CORPORATION (JP) 2000-02-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN ASIC1, RER1, RPS10 POLB 1553/4885KDM4E 3349/4885TSHR 941/4885
US-20100324329-A1 COMPOUND AFF2, AFF1, AFF4 POLB 1732/4885KDM4E 3442/4885TSHR 890/4885
US-20030211421-A1 Optically active compound and photosensitive resin composition ARCN1, RAD51, PAM POLB 2346/4885KDM4E 1317/4885TSHR 4402/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.