SCHEMBL703697

SCHEMBL703697

CC(C)C(O[SiH3])(c1ccccc1)C(C)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.35
CYP2D6 P10635 2/20 0.34
CYP1A2 P05177 1/20 0.34
MAPK1 P28482 1/20 0.33
KCNN4 O15554 1/20 0.32
TAAR1 Q96RJ0 2/20 0.31
ALDH1A1 P00352 1/20 0.31
ALOX15 P16050 1/20 0.31
ADRA2A P08913 1/20 0.31
ADRA2C P18825 1/20 0.31
LMNA P02545 1/20 0.31
HIF1A Q16665 1/20 0.31
KDM4E B2RXH2 1/20 0.31
KIF11 P52732 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30
CACNA1F O60840 1/20 0.30
CHRM2 P08172 1/20 0.30
CHRM1 P11229 1/20 0.30
ADRA2B P18089 1/20 0.30
CHRM3 P20309 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704037 0.86 CYP2D6 (0.39) RIPK1CYP2D6CYP1A2MAPK1KCNN4
SCHEMBL705584 0.80 LMNA (0.35) RIPK1TAAR1LMNA
SCHEMBL703112 0.77 MAPK1 (0.35) RIPK1CYP2D6CYP1A2MAPK1KCNN4
SCHEMBL6758593 0.73 MAPK1 (0.42) RIPK1CYP2D6CYP1A2MAPK1KCNN4
SCHEMBL704259 0.72 SLC6A4 (0.41) RIPK1CYP2D6MAPK1TAAR1ALDH1A1
SCHEMBL1314423 0.72 KIF11 (0.39) CYP2D6MAPK1KCNN4TAAR1ALDH1A1
SCHEMBL6741619 0.71 TAAR1 (0.41) RIPK1CYP2D6CYP1A2MAPK1KCNN4
SCHEMBL15301877 0.70 ALDH1A1 (0.31) MAPK1ALDH1A1
SCHEMBL703675 0.70 CYP2D6 (0.39) RIPK1CYP2D6CYP1A2MAPK1KCNN4
SCHEMBL1147242 0.70 ALDH1A1 (0.52) CYP2D6CYP1A2MAPK1KCNN4ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed