SCHEMBL705584

SCHEMBL705584

CCC(c1ccccc1)C(O[SiH3])(c1ccccc1)C(C)C

nearest known ligand 0.35

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.35
RIPK1 Q13546 2/20 0.35
MEN1 O00255 7/20 0.35
KMT2A Q03164 7/20 0.35
POLB P06746 1/20 0.33
TRPA1 O75762 1/20 0.33
FFAR1 O14842 1/20 0.32
GRIN1 Q05586 4/20 0.32
GRIN2A Q12879 4/20 0.32
GRIN2D O15399 3/20 0.32
GRIN2C Q14957 3/20 0.32
GRIN2B Q13224 2/20 0.32
TAAR1 Q96RJ0 2/20 0.32
ATM Q13315 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704037 0.80 CYP2D6 (0.39) RIPK1TAAR1
SCHEMBL703697 0.80 RIPK1 (0.35) LMNARIPK1TAAR1
SCHEMBL705750 0.78 LMNA (0.38) LMNAMEN1KMT2APOLBTRPA1
SCHEMBL1314423 0.78 KIF11 (0.39) LMNAMEN1KMT2AGRIN1GRIN2A
SCHEMBL15302359 0.75 MEN1 (0.33) LMNAMEN1KMT2APOLBATM
SCHEMBL706206 0.74 LMNA (0.41) LMNARIPK1MEN1KMT2APOLB
SCHEMBL3166658 0.73 RIPK1 (0.43) LMNARIPK1MEN1KMT2ATRPA1
SCHEMBL6758593 0.72 MAPK1 (0.42) RIPK1GRIN1GRIN2AGRIN2DGRIN2C
SCHEMBL9161407 0.72 LMNA (0.42) LMNAMEN1KMT2APOLBTRPA1
SCHEMBL756292 0.71 LMNA (0.45) LMNARIPK1MEN1KMT2APOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed