Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.37 |
| ▸ | MEN1 | O00255 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.34 |
| ▸ | LTA4H | P09960 | 2/20 | 0.34 |
| ▸ | HPGD | P15428 | 1/20 | 0.34 |
| ▸ | TLR8 | Q9NR97 | 1/20 | 0.34 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | ELANE | P08246 | 1/20 | 0.31 |
| ▸ | SOAT1 | P35610 | 1/20 | 0.31 |
| ▸ | TP53 | P04637 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL706837 | 0.89 | LMNA (0.38) | LMNAMEN1KMT2AALDH1A1LTA4H | |
| SCHEMBL705096 | 0.88 | LTA4H (0.44) | ALDH1A1LTA4HTLR8TSHRSOAT1 | |
| SCHEMBL704046 | 0.88 | KMT2A (0.37) | LMNAMEN1KMT2AALDH1A1LTA4H | |
| SCHEMBL702331 | 0.86 | KMT2A (0.36) | LMNAMEN1KMT2AALDH1A1LTA4H | |
| SCHEMBL4077334 | 0.84 | LMNA (0.35) | LMNAMEN1KMT2AALDH1A1LTA4H | |
| SCHEMBL4074071 | 0.84 | LMNA (0.35) | LMNAMEN1KMT2AALDH1A1LTA4H | |
| SCHEMBL707297 | 0.84 | LTA4H (0.36) | LMNAMEN1KMT2AALDH1A1LTA4H | |
| SCHEMBL4082446 | 0.84 | LMNA (0.35) | LMNAMEN1KMT2AALDH1A1LTA4H | |
| SCHEMBL704098 | 0.84 | LTA4H (0.36) | LMNAMEN1KMT2AALDH1A1LTA4H | |
| SCHEMBL708759 | 0.83 | LTA4H (0.34) | ALDH1A1LTA4HHPGDTLR8TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7604866-B2 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2009-10-20 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-20060269724-A1 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2006-11-30 | — | — | US | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |