SCHEMBL703604

SCHEMBL703604

CC(C)(C)O[Si](OC(C)(C)C)(c1ccccc1)c1ccc([Si](OC(C)(C)C)(OC(C)(C)C)c2ccccc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.37
ESR2 Q92731 1/20 0.37
MAPK1 P28482 1/20 0.36
NR1H2 P55055 2/20 0.34
NR1H3 Q13133 2/20 0.34
ALDH1A1 P00352 2/20 0.33
ALOX15 P16050 1/20 0.33
TSHR P16473 1/20 0.32
HSD17B10 Q99714 1/20 0.32
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL430199 0.98 MAPK1 (0.37) ESR1ESR2MAPK1NR1H2NR1H3
SCHEMBL432711 0.88 MAPK1 (0.34) ESR1ESR2MAPK1ALDH1A1ALOX15
SCHEMBL2498900 0.85 ALDH1A1 (0.43) ALDH1A1TSHR
SCHEMBL2504307 0.84 PAX8 (0.33) ESR1ESR2NR1H2NR1H3ALDH1A1
SCHEMBL24442805 0.81 NPSR1 (0.31) MAPK1TSHR
SCHEMBL703641 0.81 ESR1 (0.37) ESR1ESR2MAPK1NR1H2NR1H3
SCHEMBL705274 0.81 ESR1 (0.41) ESR1ESR2MAPK1NR1H2NR1H3
SCHEMBL707572 0.79 MAPK1 (0.34) ESR1ESR2MAPK1ALDH1A1ALOX15
SCHEMBL191229 0.78 MAPK1 (0.37) ESR1ESR2MAPK1NR1H2NR1H3
SCHEMBL704060 0.78 MAPK1 (0.37) ESR1ESR2MAPK1NR1H2NR1H3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed