SCHEMBL704104

SCHEMBL704104

CC(=O)O[SiH](OC(C)=O)C(C)c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.44
CYP3A4 P08684 2/20 0.44
KMT2A Q03164 1/20 0.42
CYP2D6 P10635 1/20 0.40
HPGD P15428 1/20 0.40
SRC P12931 1/20 0.40
HCAR2 Q8TDS4 1/20 0.40
ALOX5 P09917 1/20 0.39
LMNA P02545 2/20 0.39
MAPK1 P28482 1/20 0.39
PTGS1 P23219 1/20 0.39
MTNR1A P48039 1/20 0.38
MTNR1B P49286 1/20 0.38
CES2 O00748 1/20 0.38
CES1 P23141 1/20 0.38
TSHR P16473 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705418 0.78 LMNA (0.41) ALDH1A1CYP3A4KMT2ACYP2D6LMNA
SCHEMBL706199 0.75 MTNR1A (0.39) ALDH1A1CYP3A4KMT2ACYP2D6LMNA
SCHEMBL28477004 0.73 ALDH1A1 (0.42) ALDH1A1CYP3A4KMT2ACYP2D6HPGD
SCHEMBL6562936 0.72 FFAR1 (0.40) ALDH1A1CYP3A4KMT2ACYP2D6HPGD
SCHEMBL296207 0.72 KMT2A (0.40) ALDH1A1KMT2ACYP2D6LMNAMAPK1
SCHEMBL114793 0.71 HCAR2 (0.59) ALDH1A1CYP3A4KMT2ACYP2D6HPGD
SCHEMBL6267290 0.71 HCAR2 (0.59) ALDH1A1CYP3A4KMT2ACYP2D6HPGD
SCHEMBL6392245 0.71 HCAR2 (0.59) ALDH1A1CYP3A4KMT2ACYP2D6HPGD
SCHEMBL2292807 0.71 HCAR2 (0.59) ALDH1A1CYP3A4KMT2ACYP2D6HPGD
SCHEMBL713112 0.71 ALDH1A1 (0.37) ALDH1A1CYP3A4HPGDPTGS1MTNR1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed