SCHEMBL706199

SCHEMBL706199

CCCC(c1ccccc1)[SiH](OC(C)=O)OC(C)=O

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
MTNR1A P48039 1/20 0.39
MTNR1B P49286 1/20 0.39
AOC3 Q16853 2/20 0.38
ALDH1A1 P00352 2/20 0.38
CYP3A4 P08684 1/20 0.38
POLB P06746 4/20 0.37
PPARG P37231 2/20 0.37
PPARA Q07869 2/20 0.37
KMT2A Q03164 1/20 0.36
MMP8 P22894 1/20 0.36
MME P08473 1/20 0.35
LMNA P02545 2/20 0.35
CYP1A2 P05177 1/20 0.35
CYP2D6 P10635 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705418 0.87 LMNA (0.41) MTNR1AMTNR1BALDH1A1CYP3A4POLB
SCHEMBL704370 0.78 AOC3 (0.40) AOC3POLBKMT2AMMP8LMNA
SCHEMBL703457 0.76 AOC3 (0.39) AOC3POLBKMT2AMMP8LMNA
SCHEMBL704104 0.75 ALDH1A1 (0.44) MTNR1AMTNR1BALDH1A1CYP3A4KMT2A
SCHEMBL706757 0.75 AOC3 (0.38) AOC3POLBKMT2ALMNACYP1A2
SCHEMBL703614 0.75 AOC3 (0.38) AOC3ALDH1A1CYP3A4POLBKMT2A
SCHEMBL706248 0.75 AOC3 (0.38) MTNR1AMTNR1BAOC3PPARGPPARA
SCHEMBL10608215 0.73 AOC3 (0.46) MTNR1AMTNR1BAOC3ALDH1A1POLB
SCHEMBL702250 0.72 LTA4H (0.40) AOC3ALDH1A1POLBLMNACYP1A2
SCHEMBL29377527 0.71 PABPC1 (0.52) MTNR1AMTNR1BAOC3ALDH1A1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed