SCHEMBL704155

SCHEMBL704155

CCC(Oc1ccccc1)(Oc1ccccc1)[SiH2]C[SiH2]C(CC)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.35
CA4 P22748 1/20 0.34
TAAR1 Q96RJ0 1/20 0.33
CHRNB2 P17787 2/20 0.32
CHRNB4 P30926 2/20 0.32
CHRNA3 P32297 2/20 0.32
CHRNA7 P36544 2/20 0.32
CHRNA4 P43681 2/20 0.32
KCNA3 P22001 1/20 0.32
TSHR P16473 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
RIPK1 Q13546 1/20 0.31
PPARG P37231 1/20 0.31
PPARA Q07869 1/20 0.31
LMNA P02545 1/20 0.31
HTR1D P28221 1/20 0.31
HTR1B P28222 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705986 0.88 LTA4H (0.35) LTA4HCA4TAAR1CHRNB2CHRNB4
SCHEMBL705262 0.85 LTA4H (0.35) LTA4HCA4TAAR1CHRNB2CHRNB4
SCHEMBL702540 0.85 LTA4H (0.35) LTA4HCA4TAAR1CHRNB2CHRNB4
SCHEMBL707992 0.78 CHRNB2 (0.35) LTA4HCA4TAAR1CHRNB2CHRNB4
SCHEMBL705201 0.75 CA4 (0.37) LTA4HCA4KCNA3TSHRRIPK1
SCHEMBL183720 0.70 LTA4H (0.40) LTA4HCA4TAAR1CHRNB2CHRNB4
SCHEMBL3081094 0.70 LTA4H (0.40) LTA4HCA4CHRNB2CHRNB4CHRNA3
SCHEMBL1453725 0.70 LTA4H (0.40) LTA4HCA4CHRNB2CHRNB4CHRNA3
SCHEMBL9816269 0.70 LTA4H (0.40) LTA4HCA4CHRNB2CHRNB4CHRNA3
SCHEMBL4264045 0.68 LTA4H (0.39) LTA4HCA4CHRNB2CHRNB4CHRNA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed