SCHEMBL704174

SCHEMBL704174

CCCC[Si](CCCC)(OC(C)(C)C)c1ccc([Si](CCCC)(CCCC)OC(C)(C)C)cc1

nearest known ligand 0.39

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
NR1H2 P55055 2/20 0.39
NR1H3 Q13133 2/20 0.39
AR P10275 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707830 0.90 LTA4H (0.35) NR1H2NR1H3AR
SCHEMBL707346 0.87 NR1H2 (0.37) NR1H2NR1H3
SCHEMBL704290 0.82 NR1H2 (0.38) NR1H2NR1H3AR
SCHEMBL702156 0.80 ESR1 (0.33) NR1H2NR1H3AR
SCHEMBL706458 0.78 AR (0.39) NR1H2NR1H3AR
SCHEMBL704057 0.78 MAPK1 (0.31) NR1H2NR1H3
SCHEMBL712784 0.77 AR (0.38) NR1H2NR1H3AR
SCHEMBL707158 0.75 AR (0.37) NR1H2NR1H3AR
SCHEMBL705077 0.75 AR (0.37) NR1H2NR1H3AR
SCHEMBL707041 0.75 LMNA (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed