SCHEMBL707830

SCHEMBL707830

CCCC[Si](CCCC)(OC(C)(C)C)c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.35
PTGS2 P35354 1/20 0.34
NR1H2 P55055 1/20 0.33
NR1H3 Q13133 1/20 0.33
TSHR P16473 1/20 0.33
PCSK9 Q8NBP7 1/20 0.32
CTSK P43235 2/20 0.32
NAAA Q02083 1/20 0.31
AR P10275 1/20 0.31
CYP1A2 P05177 2/20 0.31
CYP2C9 P11712 2/20 0.31
CYP2C19 P33261 2/20 0.31
CYP2D6 P10635 1/20 0.30
CYP19A1 P11511 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704174 0.90 NR1H2 (0.39) NR1H2NR1H3AR
SCHEMBL704057 0.89 MAPK1 (0.31) NR1H2NR1H3
SCHEMBL704923 0.84 LTA4H (0.34) LTA4HPTGS2NR1H2NR1H3TSHR
SCHEMBL28039482 0.84 PTGS2 (0.37) LTA4HPTGS2NR1H2NR1H3TSHR
SCHEMBL704110 0.82 MAPK1 (0.32)
SCHEMBL706929 0.81 LTA4H (0.37) LTA4HPTGS2TSHRPCSK9NAAA
SCHEMBL705821 0.79 LTA4H (0.36) LTA4HPTGS2TSHRPCSK9NAAA
SCHEMBL5858528 0.79 LTA4H (0.36) LTA4HPTGS2TSHRPCSK9NAAA
SCHEMBL707346 0.78 NR1H2 (0.37) NR1H2NR1H3
SCHEMBL708788 0.78 LTA4H (0.39) LTA4HTSHRCYP1A2CYP2C9CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed