SCHEMBL704203

SCHEMBL704203

CCC(=O)O[SiH](CC[SiH](OC(=O)CC)OC(=O)CC)OC(=O)CC

nearest known ligand 0.38

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.38
NAAA Q02083 1/20 0.34
TDP1 Q9NUW8 2/20 0.33
FFAR3 O14843 1/20 0.33
MGAM O43451 1/20 0.32
GAA P10253 1/20 0.32
SI P14410 1/20 0.32
MGAM2 Q2M2H8 1/20 0.32
SOAT1 P35610 1/20 0.32
HIF1A Q16665 2/20 0.31
CYP1A2 P05177 1/20 0.31
HPGD P15428 1/20 0.31
CYP2C19 P33261 1/20 0.31
BLM P54132 1/20 0.31
WRN Q14191 1/20 0.31
ESR1 P03372 1/20 0.30
RECQL P46063 1/20 0.30
KMT2A Q03164 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL712068 0.90 NAAA (0.37) ALDH1A1NAAATDP1FFAR3
SCHEMBL705062 0.90 ALDH1A1 (0.40) ALDH1A1NAAATDP1FFAR3
SCHEMBL704697 0.83 ALDH1A1 (0.38) ALDH1A1NAAATDP1FFAR3MGAM
SCHEMBL7057740 0.82 NAAA (0.50) ALDH1A1NAAATDP1ESR1KMT2A
SCHEMBL7979936 0.82 NAAA (0.32) ALDH1A1NAAA
SCHEMBL6746945 0.80 MEN1 (0.35) KMT2A
SCHEMBL3901993 0.80 ALDH1A1 (0.36) ALDH1A1NAAARECQL
SCHEMBL3475769 0.80
SCHEMBL5403233 0.79 ALDH1A1 (0.35) ALDH1A1NAAATDP1FFAR3
SCHEMBL5391570 0.79 ALDH1A1 (0.35) ALDH1A1NAAATDP1FFAR3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed