SCHEMBL705062

SCHEMBL705062

CCC(=O)O[SiH](CCCC[SiH](OC(=O)CC)OC(=O)CC)OC(=O)CC

nearest known ligand 0.40

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.40
NAAA Q02083 1/20 0.37
HTT P42858 1/20 0.31
TDP1 Q9NUW8 2/20 0.30
FFAR3 O14843 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL712068 0.95 NAAA (0.37) ALDH1A1NAAAHTTTDP1FFAR3
SCHEMBL7057740 0.91 NAAA (0.50) ALDH1A1NAAATDP1
SCHEMBL704203 0.90 ALDH1A1 (0.38) ALDH1A1NAAATDP1FFAR3
SCHEMBL7979936 0.87 NAAA (0.32) ALDH1A1NAAA
SCHEMBL3901993 0.85 ALDH1A1 (0.36) ALDH1A1NAAAHTT
SCHEMBL3889133 0.83 ALDH1A1 (0.36) ALDH1A1NAAAHTT
SCHEMBL3890834 0.82 NAAA (0.37) ALDH1A1NAAAHTT
SCHEMBL7758883 0.82 ALDH1A1 (0.50) ALDH1A1NAAAHTT
SCHEMBL704697 0.79 ALDH1A1 (0.38) ALDH1A1NAAATDP1FFAR3
SCHEMBL9181699 0.79

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed