SCHEMBL704337

SCHEMBL704337

CC(C)c1c(O[SiH3])ccc(-c2ccccc2)c1-c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 1/20 0.36
PDE4B Q07343 3/20 0.33
PDE4A P27815 2/20 0.33
PDE4C Q08493 2/20 0.33
PDE4D Q08499 2/20 0.33
GCGR P47871 1/20 0.32
MAOB P27338 1/20 0.30
CDC25A P30304 1/20 0.30
CDC25B P30305 1/20 0.30
ADRB2 P07550 1/20 0.30
KDM4E B2RXH2 1/20 0.30
MEN1 O00255 1/20 0.30
USP2 O75604 1/20 0.30
ALDH1A1 P00352 1/20 0.30
MAPT P10636 1/20 0.30
DUSP3 P51452 1/20 0.30
KMT2A Q03164 1/20 0.30
TDP1 Q9NUW8 1/20 0.30
DHFR P00374 1/20 0.30
ADRA2A P08913 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705576 0.78 LMNA (0.34) PDE4BPDE4APDE4CPDE4DALDH1A1
SCHEMBL7903707 0.77 USP2 (0.40) CYP2D6KDM4EUSP2ALDH1A1MAPT
SCHEMBL17835871 0.77 GPR84 (0.49) CYP2D6PDE4BPDE4APDE4CPDE4D
SCHEMBL8135460 0.75 GCGR (0.35) PDE4BPDE4APDE4CPDE4DGCGR
SCHEMBL8758997 0.74 BACE1 (0.43) PDE4BPDE4APDE4CPDE4DGCGR
SCHEMBL28665034 0.72 CA1 (0.35) PDE4BPDE4APDE4CPDE4DGCGR
SCHEMBL28280301 0.72 KMT2A (0.46) PDE4BPDE4APDE4CPDE4DKDM4E
SCHEMBL6838848 0.71 CDC25A (0.41) CYP2D6CDC25ACDC25BMEN1ALDH1A1
SCHEMBL18784858 0.71 MAPK1 (0.39) ADRB2ALDH1A1MAPTTDP1
SCHEMBL940549 0.69 CD274 (0.40) PDE4BPDE4APDE4CPDE4DKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed