SCHEMBL704363

SCHEMBL704363

CC(C)O[SiH2]CC(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 5/20 0.39
HRH1 P35367 5/20 0.39
HTR2A P28223 4/20 0.39
TDP1 Q9NUW8 1/20 0.38
CHRM2 P08172 2/20 0.37
CHRM1 P11229 2/20 0.37
ADRA1A P35348 2/20 0.37
SLC6A3 Q01959 2/20 0.37
KCNH2 Q12809 2/20 0.37
CYP3A4 P08684 2/20 0.37
HTR1A P08908 1/20 0.37
ADRA2A P08913 1/20 0.37
ADORA3 P0DMS8 1/20 0.37
SMPD1 P17405 1/20 0.37
DRD1 P21728 1/20 0.37
TBXA2R P21731 1/20 0.37
SLC6A2 P23975 1/20 0.37
SLC6A4 P31645 1/20 0.37
OPRM1 P35372 1/20 0.37
DRD3 P35462 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18662231 0.81 HTR2A (0.39) TAAR1HRH1HTR2ATDP1CHRM2
SCHEMBL703036 0.80 CYP3A4 (0.43) TAAR1HRH1HTR2ACHRM2CHRM1
SCHEMBL705544 0.78 HTR2A (0.41) TAAR1HRH1HTR2ATDP1CHRM2
SCHEMBL708761 0.75 HTR2A (0.39) TAAR1HRH1HTR2ATDP1LMNA
SCHEMBL27157805 0.74 HTR2A (0.41) TAAR1HRH1HTR2ATDP1
SCHEMBL706548 0.73 HRH1 (0.39) TAAR1HRH1HTR2ATDP1CHRM2
SCHEMBL29235855 0.72 TSHR (0.41) TAAR1HTR2AADRA1ASLC6A3KCNH2
SCHEMBL702495 0.72 SCN4A (0.39) TAAR1HRH1HTR2ATDP1SLC6A4
SCHEMBL708012 0.72 HTR2A (0.36) TAAR1HRH1HTR2ATDP1CHRM2
SCHEMBL705271 0.70 TAAR1 (0.37) TAAR1ADRA2ALMNACYP2D6ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed