SCHEMBL705271

SCHEMBL705271

CC(C)O[SiH2]C(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 4/20 0.37
KDM4E B2RXH2 2/20 0.35
ADRA2A P08913 1/20 0.35
ADRA2C P18825 1/20 0.35
CYP2D6 P10635 1/20 0.35
LMNA P02545 1/20 0.35
HIF1A Q16665 1/20 0.35
ALDH1A1 P00352 3/20 0.34
TSHR P16473 1/20 0.34
SCN1A P35498 1/20 0.34
SCN2A Q99250 1/20 0.34
SCN3A Q9NY46 1/20 0.34
MIF P14174 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
DPP4 P27487 1/20 0.33
KMT2A Q03164 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704150 0.76 KMT2A (0.40) TAAR1ADRA2AADRA2CLMNAALDH1A1
SCHEMBL433140 0.75 DPP4 (0.39) TAAR1CYP2D6LMNATSHRDPP4
SCHEMBL1313794 0.75 AOC3 (0.36) TAAR1KDM4EALDH1A1L3MBTL1
SCHEMBL28693790 0.74 KDM4E (0.33) TAAR1KDM4EADRA2AADRA2CCYP2D6
SCHEMBL1316902 0.72 ESR1 (0.47) KDM4EADRA2AADRA2CCYP2D6LMNA
SCHEMBL587674 0.71 DPP4 (0.36) TAAR1ADRA2CCYP2D6LMNATSHR
SCHEMBL707823 0.71 SLC6A4 (0.37) ADRA2CCYP2D6TSHRL3MBTL1DPP4
SCHEMBL242576 0.71 LMNA (0.40) TAAR1LMNAL3MBTL1KMT2A
SCHEMBL703093 0.70 SCN4A (0.38) TAAR1KDM4ETSHRL3MBTL1DPP4
SCHEMBL17865441 0.70 DPP4 (0.35) TAAR1CYP2D6LMNATSHRDPP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed