SCHEMBL703036

SCHEMBL703036

CC(C)O[SiH2]CCC(c1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 2/20 0.43
HTR1A P08908 2/20 0.43
ADORA3 P0DMS8 2/20 0.43
SLC6A2 P23975 2/20 0.43
SLC6A4 P31645 2/20 0.43
ADRA1A P35348 2/20 0.43
OPRM1 P35372 2/20 0.43
DRD3 P35462 2/20 0.43
SLC6A3 Q01959 2/20 0.43
KCNH2 Q12809 2/20 0.43
CASR P41180 2/20 0.43
CHRM2 P08172 1/20 0.43
ADRA2A P08913 1/20 0.43
CHRM1 P11229 1/20 0.43
SMPD1 P17405 1/20 0.43
DRD1 P21728 1/20 0.43
TBXA2R P21731 1/20 0.43
HTR2B P41595 1/20 0.43
LMNA P02545 1/20 0.43
CYP1A2 P05177 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704363 0.80 TAAR1 (0.39) CYP3A4HTR1AADORA3SLC6A2SLC6A4
SCHEMBL705040 0.80 HRH1 (0.45) CYP3A4HTR1AADORA3SLC6A2SLC6A4
SCHEMBL705237 0.77 HRH1 (0.42) CYP3A4HTR1AADORA3SLC6A2SLC6A4
SCHEMBL713409 0.76 HRH1 (0.41) CYP3A4HTR1AADORA3SLC6A2SLC6A4
SCHEMBL29001290 0.74 SIGMAR1 (0.39) SLC6A2SLC6A4SLC6A3ALDH1A1ALOX15
SCHEMBL705340 0.74 HRH1 (0.43) CYP3A4HTR1AADORA3SLC6A2SLC6A4
SCHEMBL702334 0.74 HRH1 (0.40) CYP3A4HTR1AADORA3SLC6A2SLC6A4
SCHEMBL3644776 0.72 HRH1 (0.54) CYP3A4HTR1AADORA3SLC6A2SLC6A4
SCHEMBL3342172 0.72 SIGMAR1 (0.42) CYP2D6CYP2C19MEN1KMT2ASIGMAR1
SCHEMBL702750 0.72 SIGMAR1 (0.41) CYP3A4HTR1AADORA3SLC6A2SLC6A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed