SCHEMBL706548

SCHEMBL706548

CC(C)(C)O[SiH2]CC(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HRH1 P35367 5/20 0.39
CACNA1F O60840 1/20 0.39
CHRM2 P08172 1/20 0.39
CHRM1 P11229 1/20 0.39
ADRA2B P18089 1/20 0.39
CHRM3 P20309 1/20 0.39
ADRA1A P35348 1/20 0.39
OPRK1 P41145 1/20 0.39
CACNA1D Q01668 1/20 0.39
SLC6A3 Q01959 1/20 0.39
KCNH2 Q12809 1/20 0.39
CACNA1S Q13698 1/20 0.39
CACNA1C Q13936 1/20 0.39
SCN5A Q14524 1/20 0.39
HTR2A P28223 4/20 0.38
RIPK1 Q13546 2/20 0.37
TAAR1 Q96RJ0 1/20 0.37
TDP1 Q9NUW8 1/20 0.36
SLC6A4 P31645 1/20 0.35
KDM4E B2RXH2 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL713409 0.81 HRH1 (0.41) HRH1CACNA1FCHRM2CHRM1ADRA2B
SCHEMBL705544 0.77 HTR2A (0.41) HRH1CHRM2CHRM1ADRA1ASLC6A3
SCHEMBL708761 0.73 HTR2A (0.39) HRH1HTR2ATAAR1TDP1LMNA
SCHEMBL704363 0.73 TAAR1 (0.39) HRH1CACNA1FCHRM2CHRM1ADRA2B
SCHEMBL27157805 0.72 HTR2A (0.41) HRH1HTR2ATAAR1TDP1TSHR
SCHEMBL702495 0.71 SCN4A (0.39) HRH1HTR2ATAAR1TDP1SLC6A4
SCHEMBL18662231 0.71 HTR2A (0.39) HRH1CHRM2CHRM1ADRA2BCHRM3
SCHEMBL707823 0.71 SLC6A4 (0.37) HRH1CACNA1FCHRM2CHRM1ADRA2B
SCHEMBL29235981 0.71 AOC3 (0.40) RIPK1TAAR1LMNACYP1A2CYP3A4
SCHEMBL708012 0.71 HTR2A (0.36) HRH1CHRM2CHRM1ADRA2BCHRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed