SCHEMBL708761

SCHEMBL708761

CCO[SiH2]CC(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
HTR2A P28223 6/20 0.39
HRH1 P35367 6/20 0.39
LMNA P02545 1/20 0.39
TAAR1 Q96RJ0 3/20 0.38
POLB P06746 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
SIGMAR1 Q99720 1/20 0.36
MMP8 P22894 1/20 0.35
HPGD P15428 1/20 0.35
ALOX15 P16050 1/20 0.35
TSHR P16473 1/20 0.35
MAPK1 P28482 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
TRPA1 O75762 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708012 0.84 HTR2A (0.36) HTR2AHRH1LMNATAAR1TDP1
SCHEMBL705098 0.81 LTA4H (0.42) HTR2ALMNAPOLBTDP1SIGMAR1
SCHEMBL705237 0.80 HRH1 (0.42) HTR2AHRH1LMNATAAR1POLB
SCHEMBL705544 0.78 HTR2A (0.41) HTR2AHRH1LMNATAAR1TDP1
SCHEMBL704363 0.75 TAAR1 (0.39) HTR2AHRH1LMNATAAR1TDP1
SCHEMBL27157805 0.74 HTR2A (0.41) HTR2AHRH1TAAR1TDP1TSHR
SCHEMBL706548 0.73 HRH1 (0.39) HTR2AHRH1LMNATAAR1TDP1
SCHEMBL242576 0.72 LMNA (0.40) HTR2AHRH1LMNATAAR1POLB
SCHEMBL702495 0.72 SCN4A (0.39) HTR2AHRH1TAAR1TDP1TSHR
SCHEMBL18662231 0.72 HTR2A (0.39) HTR2AHRH1LMNATAAR1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108586254-B Process for producing diaryl carbonate and process for producing aromatic polycarbonate 旭化成株式会社 2021-06-18 CN disclosed
CN-108395374-B Process for producing diaryl carbonate 旭化成株式会社 2021-03-30 CN disclosed
US-9546237-B2 Stabilization of polymers that contain a hydrolyzable functionality BRIDGESTONE CORPORATION (JP) 2017-01-17 US disclosed
US-9029482-B2 Method for preparing polycondensation resin CHEIL INDUSTRIES INC. (KR) 2015-05-12 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20130331520-A1 STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY BRIDGESTONE CORPORATION (JP) 2013-12-12 US disclosed
CN-103249762-A Addition-curable metallosiloxane compound DAICEL CORP 2013-08-14 CN disclosed
US-20130165621-A1 Method for Preparing Polycondensation Resin CHEIL INDUSTRIES INC. (KR) 2013-06-27 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070122631-A1 Flexible substrate and coating liquid SUMITOMO CORPORATION (JP) 2007-05-31 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed
CN-1878735-A Flexible substrate and coating liquid SUMITOMO CORP (JP) 2006-12-13 CN disclosed
EP-1690839-A1 FLEXIBLE SUBSTRATE AND COATING LIQUID Sumitomo Corporation (JP) 2006-08-16 EP disclosed