SCHEMBL704634

SCHEMBL704634

CC(C)(C)O[SiH2]c1ccccc1C(C)(C)C

nearest known ligand 0.40

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.40
ALDH1A1 P00352 1/20 0.40
TSHR P16473 1/20 0.40
CA2 P00918 1/20 0.37
GABRA1 P14867 1/20 0.32
GABRB2 P47870 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
KIF11 P52732 1/20 0.32
ATM Q13315 1/20 0.31
CYP1A2 P05177 1/20 0.30
CYP2D6 P10635 1/20 0.30
CYP2C19 P33261 1/20 0.30
HSD17B10 Q99714 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2961141 0.84 MAPK1 (0.33) TDP1ALDH1A1TSHRHSD17B10
SCHEMBL19921960 0.83 ALDH1A1 (0.43) TDP1ALDH1A1TSHRCA2GABRA1
SCHEMBL17077609 0.81 TDP1 (0.41) TDP1ALDH1A1TSHRCA2GABRA1
SCHEMBL704261 0.77 ACHE (0.38) TDP1ALDH1A1TSHRCA2
SCHEMBL27660681 0.76 ALDH1A1 (0.38) TDP1ALDH1A1TSHRCA2GABRA1
SCHEMBL703371 0.76 ALDH1A1 (0.38) TDP1ALDH1A1TSHRCA2GABRA1
SCHEMBL27173776 0.76 ALDH1A1 (0.44) TDP1ALDH1A1TSHRCA2GABRA1
SCHEMBL28872550 0.75 ALDH1A1 (0.34) ALDH1A1CA2
SCHEMBL28172891 0.73 CA1 (0.46) TDP1ALDH1A1TSHRCA2HSD17B10
SCHEMBL705808 0.73 ALDH1A1 (0.39) TDP1ALDH1A1TSHRCA2GABRA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed