SCHEMBL705808

SCHEMBL705808

CC(=O)O[SiH2]c1ccccc1C(C)(C)C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.39
TDP1 Q9NUW8 2/20 0.39
TSHR P16473 1/20 0.39
ATM Q13315 1/20 0.37
CA2 P00918 1/20 0.36
KDM4E B2RXH2 2/20 0.35
GAA P10253 1/20 0.35
RXRA P19793 1/20 0.35
RXRB P28702 1/20 0.35
RXRG P48443 1/20 0.35
BCHE P06276 1/20 0.33
RBP4 P02753 1/20 0.33
NPSR1 Q6W5P4 2/20 0.33
NAMPT P43490 1/20 0.33
GABRA1 P14867 1/20 0.32
GABRB2 P47870 1/20 0.32
LPAR1 Q92633 1/20 0.32
ALOX5 P09917 1/20 0.32
PTGS1 P23219 1/20 0.32
PTGS2 P35354 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704701 0.85 CA2 (0.37) ALDH1A1TDP1TSHRATMCA2
SCHEMBL5838714 0.83 TDP1 (0.43) ALDH1A1TDP1TSHRATMCA2
SCHEMBL5837886 0.80 TDP1 (0.37) ALDH1A1TDP1TSHRATMCA2
SCHEMBL19921960 0.77 ALDH1A1 (0.43) ALDH1A1TDP1TSHRATMCA2
SCHEMBL707854 0.76 ALDH1A1 (0.38) ALDH1A1TDP1TSHRKDM4EGAA
SCHEMBL17077609 0.75 TDP1 (0.41) ALDH1A1TDP1TSHRATMCA2
SCHEMBL704634 0.73 TDP1 (0.40) ALDH1A1TDP1TSHRATMCA2
SCHEMBL704566 0.73 GABRA1 (0.38) ALDH1A1TSHRNPSR1GABRA1GABRB2
SCHEMBL713113 0.71 GABRA1 (0.39) TSHRCA2GABRA1GABRB2LPAR1
SCHEMBL27660681 0.70 ALDH1A1 (0.38) ALDH1A1TDP1TSHRCA2KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed