SCHEMBL703371

SCHEMBL703371

CC(C)O[SiH2]c1ccccc1C(C)(C)C

nearest known ligand 0.38

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.38
TSHR P16473 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
CA2 P00918 1/20 0.34
GABRA1 P14867 1/20 0.31
GABRB2 P47870 1/20 0.31
KIF11 P52732 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL714784 0.84 CA2 (0.35) ALDH1A1TSHRTDP1CA2GABRA1
SCHEMBL2961097 0.81 ALDH1A1 (0.32) ALDH1A1
SCHEMBL19921960 0.79 ALDH1A1 (0.43) ALDH1A1TSHRTDP1CA2GABRA1
SCHEMBL17077609 0.78 TDP1 (0.41) ALDH1A1TSHRTDP1CA2GABRA1
SCHEMBL704634 0.76 TDP1 (0.40) ALDH1A1TSHRTDP1CA2GABRA1
SCHEMBL706201 0.74 ACHE (0.38) ALDH1A1TSHRTDP1CA2
SCHEMBL27660681 0.73 ALDH1A1 (0.38) ALDH1A1TSHRTDP1CA2GABRA1
SCHEMBL27173776 0.73 ALDH1A1 (0.44) ALDH1A1TSHRTDP1CA2GABRA1
SCHEMBL706902 0.72 GABRA1 (0.40) ALDH1A1TSHRCA2GABRA1GABRB2
SCHEMBL1639607 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed