SCHEMBL704662

SCHEMBL704662

CCCC[Si](CCCC)(OC(C)=O)c1ccc([Si](CCCC)(CCCC)OC(C)=O)cc1

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
AR P10275 1/20 0.39
ALDH1A1 P00352 1/20 0.38
NR1H2 P55055 1/20 0.37
NR1H3 Q13133 1/20 0.37
PTGS2 P35354 5/20 0.36
TSHR P16473 3/20 0.34
HTT P42858 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
TP53 P04637 1/20 0.33
CYP3A4 P08684 1/20 0.33
MAPK1 P28482 1/20 0.33
NAAA Q02083 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705553 0.91 PTGS2 (0.40) ALDH1A1PTGS2TSHRHTTTDP1
SCHEMBL705844 0.88 ESR1 (0.35) ALDH1A1NR1H2NR1H3PTGS2L3MBTL1
SCHEMBL703647 0.83 AR (0.38) ARALDH1A1NR1H2NR1H3PTGS2
SCHEMBL705215 0.79 ESR1 (0.37) ARALDH1A1NR1H2NR1H3PTGS2
SCHEMBL703232 0.79 ALDH1A1 (0.40) ALDH1A1PTGS2L3MBTL1
SCHEMBL7181765 0.79 TSHR (0.39) ALDH1A1TSHRHTTTDP1L3MBTL1
SCHEMBL706458 0.75 AR (0.39) ARNR1H2NR1H3CYP3A4
SCHEMBL706197 0.75 PTGS2 (0.39) ALDH1A1PTGS2TSHRHTTTDP1
SCHEMBL6554058 0.75 PTGS2 (0.39) ALDH1A1PTGS2TSHRHTTTDP1
SCHEMBL702253 0.74 NR1H2 (0.34) ALDH1A1NR1H2NR1H3PTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed