SCHEMBL703232

SCHEMBL703232

CCC[Si](CCC)(OC(C)=O)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.40
MTNR1A P48039 6/20 0.39
MTNR1B P49286 6/20 0.39
MAPT P10636 1/20 0.39
LMNA P02545 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
CES2 O00748 2/20 0.36
CES1 P23141 2/20 0.36
PTGS2 P35354 2/20 0.36
NPSR1 Q6W5P4 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705844 0.90 ESR1 (0.35) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL705553 0.89 PTGS2 (0.40) ALDH1A1L3MBTL1CES2CES1PTGS2
SCHEMBL705143 0.85 ALDH1A1 (0.42) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL707770 0.84 ALDH1A1 (0.39) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL705416 0.84 ALDH1A1 (0.39) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL27863699 0.82 THRB (0.40) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL704662 0.79 AR (0.39) ALDH1A1L3MBTL1PTGS2
SCHEMBL706197 0.77 PTGS2 (0.39) ALDH1A1LMNAL3MBTL1CES2CES1
SCHEMBL6554058 0.77 PTGS2 (0.39) ALDH1A1L3MBTL1CES2CES1PTGS2
SCHEMBL7181765 0.77 TSHR (0.39) ALDH1A1MAPTL3MBTL1CES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed