SCHEMBL704923

SCHEMBL704923

CCCC[Si](OC(C)(C)C)(OC(C)(C)C)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.34
PTGS2 P35354 1/20 0.33
NR1H2 P55055 1/20 0.32
NR1H3 Q13133 1/20 0.32
TSHR P16473 1/20 0.32
CTSK P43235 1/20 0.31
PCSK9 Q8NBP7 1/20 0.31
NPC1 O15118 2/20 0.31
RAB9A P51151 2/20 0.31
SMN1; SMN2 Q16637 2/20 0.31
LMNA P02545 1/20 0.31
NAAA Q02083 1/20 0.30
SLC9A1 P19634 1/20 0.30
AR P10275 1/20 0.30
CYP1A2 P05177 1/20 0.30
CYP2C9 P11712 1/20 0.30
CYP2C19 P33261 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705211 0.91 MAPK1 (0.31)
SCHEMBL702601 0.91 MAPK1 (0.31)
SCHEMBL704290 0.91 NR1H2 (0.38) NR1H2NR1H3AR
SCHEMBL706874 0.89 HTR1A (0.31) NR1H2NR1H3
SCHEMBL706128 0.87 MAPK1 (0.33) TSHR
SCHEMBL707830 0.84 LTA4H (0.35) LTA4HPTGS2NR1H2NR1H3TSHR
SCHEMBL13089625 0.83
SCHEMBL28039482 0.82 PTGS2 (0.37) LTA4HPTGS2NR1H2NR1H3TSHR
SCHEMBL706758 0.81 MAPK1 (0.32)
SCHEMBL704368 0.79 LTA4H (0.37) LTA4HPTGS2TSHRPCSK9NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed