SCHEMBL704973

SCHEMBL704973

CCCc1cccc([SiH2]F)c1CCC

nearest known ligand 0.33

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
GRM5 P41594 1/20 0.33
ALDH1A1 P00352 2/20 0.32
KDM4E B2RXH2 1/20 0.32
GAA P10253 1/20 0.32
HPGD P15428 1/20 0.32
DAO P14920 1/20 0.32
LTB4R Q15722 1/20 0.31
LTB4R2 Q9NPC1 1/20 0.31
GABRA1 P14867 2/20 0.30
GABRB2 P47870 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704108 0.85 CYP3A4 (0.37)
SCHEMBL28496604 0.81 KDM4E (0.32) GRM5ALDH1A1KDM4EGAAHPGD
SCHEMBL21383287 0.81 KDM4E (0.32) GRM5ALDH1A1KDM4EGAAHPGD
SCHEMBL3482133 0.81 DAO (0.35) GRM5ALDH1A1KDM4EGAAHPGD
SCHEMBL705069 0.81 GABRA1 (0.34) GRM5ALDH1A1KDM4EGAAHPGD
SCHEMBL704074 0.81 ALDH1A1 (0.32) GRM5ALDH1A1KDM4EGAAHPGD
SCHEMBL1452942 0.79 ALDH1A1 (0.41) GRM5ALDH1A1KDM4EGAAHPGD
SCHEMBL704995 0.76 GABRA1 (0.41) ALDH1A1GAAGABRA1GABRB2
SCHEMBL703700 0.74 LTB4R (0.30) LTB4RLTB4R2
SCHEMBL704058 0.74 LTB4R (0.30) LTB4RLTB4R2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed