SCHEMBL704995

SCHEMBL704995

CCc1cccc([SiH2]F)c1CC

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 4/20 0.41
GABRB2 P47870 4/20 0.41
TAAR1 Q96RJ0 2/20 0.39
KCNH2 Q12809 2/20 0.37
SCN5A Q14524 2/20 0.37
HTR1A P08908 1/20 0.36
MAPT P10636 2/20 0.34
HDAC3 O15379 1/20 0.34
HDAC4 P56524 1/20 0.34
HDAC1 Q13547 1/20 0.34
HDAC7 Q8WUI4 1/20 0.34
HDAC2 Q92769 1/20 0.34
HDAC10 Q969S8 1/20 0.34
HDAC11 Q96DB2 1/20 0.34
HDAC8 Q9BY41 1/20 0.34
HDAC6 Q9UBN7 1/20 0.34
HDAC9 Q9UKV0 1/20 0.34
HDAC5 Q9UQL6 1/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706449 0.79 GABRA1 (0.46) GABRA1GABRB2TAAR1KCNH2SCN5A
SCHEMBL9745359 0.79 GABRA1 (0.46) GABRA1GABRB2TAAR1KCNH2SCN5A
SCHEMBL21383327 0.79 GABRA1 (0.41) GABRA1GABRB2TAAR1KCNH2SCN5A
SCHEMBL703208 0.79 GABRA1 (0.41) GABRA1GABRB2TAAR1KCNH2SCN5A
SCHEMBL245773 0.77 GABRA1 (0.57) GABRA1GABRB2TAAR1KCNH2SCN5A
SCHEMBL704973 0.76 GRM5 (0.33) GABRA1GABRB2ALDH1A1GAA
Methane SCHEMBL28776675 0.74 GABRA1 (0.55) GABRA1GABRB2TAAR1KCNH2SCN5A
Methylamine SCHEMBL27545014 0.74 GABRA1 (0.55) GABRA1GABRB2TAAR1KCNH2SCN5A
SCHEMBL31498538 0.74 GABRA1 (0.55) GABRA1GABRB2TAAR1KCNH2SCN5A
Ammonia Solution, Strong SCHEMBL27320869 0.74 GABRA1 (0.55) GABRA1GABRB2TAAR1KCNH2SCN5A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed