Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADRB2 | P07550 | 1/20 | 0.35 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.35 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.35 |
| ▸ | DNM1 | Q05193 | 2/20 | 0.33 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.30 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23093136 | 0.91 | ADRB2 (0.35) | ADRB2ADRB1ADRB3TSHRCYP3A4 | |
| SCHEMBL702801 | 0.91 | DNM1 (0.33) | DNM1TSHRSMN1; SMN2CYP3A4ALDH1A1 | |
| SCHEMBL704081 | 0.83 | DNM1 (0.35) | DNM1TSHRSMN1; SMN2CYP3A4ALDH1A1 | |
| SCHEMBL23093205 | 0.83 | ADRB2 (0.36) | ADRB2ADRB1ADRB3TSHRSMN1; SMN2 | |
| SCHEMBL8899362 | 0.77 | CES2 (0.35) | TSHR | |
| SCHEMBL27660666 | 0.75 | DNM1 (0.36) | DNM1TSHRSMN1; SMN2CYP3A4ALDH1A1 | |
| SCHEMBL706289 | 0.75 | — | — | |
| SCHEMBL10348469 | 0.73 | — | — | |
| SCHEMBL29240703 | 0.73 | — | — | |
| SCHEMBL27907010 | 0.73 | DNM1 (0.36) | DNM1TSHRSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| CN-100535054-C | Silica film forming material, silica film and preparation method thereof | FUJITSU LTD (JP) | 2009-09-02 | — | — | CN | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| CN-1891757-A | Silica film forming material, silica film and method of manufacturing the same | FUJITSU LTD (JP) | 2007-01-10 | — | — | CN | disclosed |